Nexperia B.V. Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

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Product Name	Notes
BUK9215-55A,118 BUK9216-100EJ BUK9217-75B,118 BUK9219-55A,118 BUK9222-100EJ BUK9222-55A,118 BUK9222-55A,127 BUK9223-60EJ BUK9225-55A,118 BUK9226-75A,118 BUK9230-100B,118 BUK9230-55A,118 BUK9230-80EJ BUK9237-55A,118 BUK9240-100A,118 BUK9245-55A/C1,118 BUK9275-100A,118 BUK9277-55A,118 BUK9277-55A/CDJ BUK9504-40A,127 BUK9506-40B,127 BUK9506-75B,127 BUK9507-30B,127 BUK9508-55B,127 BUK9509-40B,127 BUK9510-100B,127 BUK9511-55A,127 BUK9512-55B,127 BUK9514-55A,127 BUK9515-100A,127 BUK9518-55A,127 BUK9520-100A,127 BUK9520-100B,127 BUK9529-100B,127 BUK952R8-30B,127 BUK9535-100A,127 BUK9535-55A,127 BUK953R2-40B,127 BUK953R5-60E,127 BUK9540-100A,127 BUK954R2-55B,127 BUK954R4-40B,127 BUK954R8-60E,127 BUK956R1-100E BUK9575-100A,127 BUK9575-55A,127 BUK9604-40A,118 BUK9605-30A,118 BUK9606-40B,118 BUK9606-55B,118 BUK9606-75B,118 BUK9607-30B,118 BUK9608-55A,118 BUK9608-55B,118 BUK9609-40B,118 BUK9610-100B,118 BUK9612-55B,118 BUK9614-55A,118 BUK9615-100A,118 BUK9615-100E,118 BUK9616-75B,118 BUK96180-100A,118 BUK961R4-30E BUK9620-100B,118 BUK9624-55A,118 BUK9628-55A,118 BUK9629-100B,118 BUK962R6-40E,118 BUK962R8-30B,118 BUK962R8-60E,118 BUK963R1-40E,118 BUK963R2-40B,118 BUK9640-100A/C1,118 BUK964R1-40E,118 BUK964R2-55B,118 BUK964R2-60E,118 BUK964R4-40B,118 BUK964R7-80E,118 BUK964R8-60E,118 BUK9660-100A,118 BUK98150-55/CUF BUK9840-55,115 BUK9840-55/CUX BUK9880-55,135 BUK9880-55/CUF BUK9907-40ATC,127 BUK9C10-55BIT/A,11 BUK9C10-65BIT,118 BUK9E04-40A,127 BUK9E06-55A,127 BUK9E06-55B,127 BUK9E08-55B,127 BUK9GTHP-55PJTR,51 BUK9K17-60E,115 BUK9MJJ-55PSS/A,51 BUK9MJT-55PRF,518 BUK9MRR-65PKK,518 BUK9Y07-30B,115 BUK9Y11-30B,115 BUK9Y12-40E BUK9Y12-55B,115 BUK9Y12-80E,115 BUK9Y19-55B/C2,115 BUK9Y22-30B,115 BUK9Y30-75B/C2,115 BUK9Y53-100B,115. GAN063-650WSAQ NX2301P NX2301P,215. NX3008CBKV/DG/B2X NX3008NBK NX3008PBKMB,315 NX3008PBKW NX3020NAKT NX3020NAKV/S501X NX6020NBKS,115 NX7002AK2R NX7002AKAR NX7002AKS/ZLX NX7002BK/S911R NX7002BKS NX7002BKSQN1X NX7002BKW/S500,X NX7002BKW/S500X NXS7002AKR ON5173,118 ON5173118 ON5233,118 ON5258,215 ON5278/C4127 OP540/BD/C3,027 PH0930DLS,115 PH1225AL,115 PH1330AL,115 PH1530CL,115 PH1730AL,115 PH1930AL,115 PH20100S,115 PH2230DLSX PH2525L,115 PH2530AL,115 PH3030AL,115 PH3120L,115 PH3230S,115 PH3830DL115 PH3830DLS115 PH3830DLX PH4030AL,115 PH4030DLAX PH4840S,115 PH5030AL PH5030AL,115 PH6030AL,115 PH6030DLV-CBSNX PH6030DLVX PH6325L,115 PH6930DL115 PH6930DLX PH7030AL,115 PH7630DLX PH7730DL,115 PH8230E,115 PH9130AL,115 PH955L,115 PHB110NQ08T,118 PHB18NQ10T,118 PHB191NQ06LT,118 PHB20N06T,118 PHB20NQ20T,118 PHB33NQ20T,118 PHB45NQ15T,118 PHB66NQ03LT PHB66NQ03LT,118 PHC21025,118 PHC2300,118 PHD101NQ03LT,118 PHD20N06T,118 PHD38N02LT,118 PHD71NQ03LT,118 PHD97NQ03LT,118 PHD9NQ20T,118 PHK04P02T,518 PHK12NQ03LT,518 PHK13N03LT,518 PHK18NQ03LT,518 PHK5NQ15T,518 PHKD13N03LT,118 PHKD13N03LT,518 PHKD3NQ10T,518 PHKD6N02LT,518 PHM2230DLSX PHN203,518 PHN210T,118 PHP18NQ10T,127 PHP18NQ11T,127 PHP191NQ06LT,127 PHP20N06T,127 PHP20NQ20T,127 PHP225,118 PHP23NQ11T,127 PHP28NQ15T,127 PHP29N08T,127 PHP30NQ15T,127 PHP33NQ20T,127 PHP36N03LT,127 PHP45NQ10T,127 PHP45NQ11T,127 PHP79NQ08LT,127 PHP9NQ20T,127 PHT4NQ10LT,135 PHT4NQ10T,135 PHT6N06LT PMC85XP,115
N-channel 40 V, 11.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M11-40HX N-channel 40 V, 15.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M15-40HX N-channel 40 V, 20.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M20-40HX N-channel 40 V, 3.3 mOhm logic level MOSFET in LFPAK33 -- BUK9M3R3-40HX N-channel 40 V, 4.3 mOhm logic level MOSFET in LFPAK33 -- BUK9M4R3-40HX N-channel 40 V, 5.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M5R0-40HX N-channel 40 V, 6.0 mOhm logic level MOSFET in LFPAK33 -- BUK9M6R0-40HX N-channel 40 V, 6.7 mOhm logic level MOSFET in LFPAK33 -- BUK9M6R7-40HX N-channel 40 V, 8.5 mOhm logic level MOSFET in LFPAK33 -- BUK9M8R5-40HX N-channel 40 V, 9.5 mOhm logic level MOSFET in LFPAK33 -- BUK9M9R5-40HX	Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive...
N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 -- BUK9Y1R3-40HX N-channel 40 V, 1.6 mΩ logic level MOSFET in LFPAK56 -- BUK9Y1R6-40HX N-channel 40 V, 1.9 mΩ logic level MOSFET in LFPAK56 -- BUK9Y1R9-40HX N-channel 40 V, 2.4 mΩ logic level MOSFET in LFPAK56 -- BUK9Y2R4-40HX N-channel 40 V, 2.8 mΩ logic level MOSFET in LFPAK56 -- BUK9Y2R8-40HX N-channel 40 V, 6.5 mΩ logic level MOSFET in LFPAK56 -- BUK9Y6R5-40HX	Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101...
N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E -- BUK9J0R9-40HX	Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101...
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET -- NX6020CAKSAX 60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET -- NX6020CAKSX	Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very fast...
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET -- NX1029X,115 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET -- NX1029XH	Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very...
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET -- NX3008CBKV,115	Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage...
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET -- NX3008CBKS,115	Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching...
Dual N-channel 100 V, 159 mΩ logic level MOSFET -- BUK9K134-100EX Dual N-channel 100 V, 33 mΩ logic level MOSFET -- BUK9K32-100EX Dual N-channel 30 V, 5.3 mOhm logic level MOSFET -- BUK9K5R1-30EX Dual N-channel 30 V, 5.8 mOhm logic level MOSFET -- BUK9K5R6-30EX Dual N-channel 40 V, 29 mOhm logic level MOSFET -- BUK9K25-40E/1X Dual N-channel 40 V, 29 mOhm logic level MOSFET -- BUK9K25-40EX Dual N-channel 40 V, 7.2 mOhm logic level MOSFET -- BUK9K6R8-40EX Dual N-channel 60 V, 11.5 mΩ logic level MOSFET -- BUK9K12-60E/1X Dual N-channel 60 V, 11.5 mΩ logic level MOSFET -- BUK9K12-60EX Dual N-channel 60 V, 12.5 mOhm logic level MOSFET -- BUK9K13-60EX Dual N-channel 60 V, 17 mΩ logic level MOSFET -- BUK9K17-60E/1X Dual N-channel 60 V, 17 mΩ logic level MOSFET -- BUK9K17-60EX Dual N-channel TrenchMOS logic level FET -- BUK9K29-100E,115 Dual N-channel TrenchMOS logic level FET -- BUK9K45-100E,115 Dual N-channel TrenchMOS logic level FET -- BUK9K6R2-40E,115 Dual N-channel TrenchMOS logic level FET -- BUK9K89-100E,115	Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance...
Dual N-channel 40 V, 19.5 mOhm logic level MOSFET -- BUK9K18-40E,115 Dual N-channel 40 V, 9.4 mOhm logic level MOSFET -- BUK9K8R7-40EX Dual N-channel 60 V, 35 mΩ logic level MOSFET -- BUK9K35-60E,115 Dual N-channel 60 V, 55 mΩ logic level MOSFET -- BUK9K52-60E,115 Dual N-channel 80 V, 20 mΩ logic level MOSFET -- BUK9K20-80EX Dual N-channel 80 V, 22 mΩ logic level MOSFET -- BUK9K22-80EX Dual N-channel 80 V, 30 mΩ logic level MOSFET -- BUK9K30-80EX	Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive...
60 V, dual N-channel Trench MOSFET -- NX7002BKXBZ	Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Leadless ultra...
30 V, 200 mA dual N-channel Trench MOSFET -- NX3020NAKV,115 30 V, 200 mA dual N-channel Trench MOSFET -- NX3020NAKVYL	Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching...
30 V, dual N-channel Trench MOSFET -- NX3020NAKS-QX	Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range...
60 V, dual N-channel Trench MOSFET -- NX7002BKSX	Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
60 V, dual N-channel Trench MOSFET -- NX138AKSF 60 V, dual N-channel Trench MOSFET -- NX138AKSX 60 V, dual N-channel Trench MOSFET -- NX138BKSF 60 V, dual N-channel Trench MOSFET -- NX138BKSX 60 V, dual N-channel Trench MOSFET -- NX6008NBKSX	Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast...
30 V, 350 mA dual N-channel Trench MOSFET -- NX3008NBKS,115 30 V, 350 mA dual N-channel Trench MOSFET -- NX3008NBKSH	Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold...
30 V, 180 mA dual N-channel Trench MOSFET -- NX3020NAKS,115 60 V, dual N-channel Trench MOSFET -- NX7002AKS,115	Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET...
50 V, dual N-channel Trench MOSFET -- NX5020UNBKSX	Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very...
30 V, 400 mA dual N-channel Trench MOSFET -- NX3008NBKV,115	Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching...
30 V, dual N-channel Trench MOSFET -- NX3020NAKRA-QZ	Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast...
Dual N-Channel 100V, 31 mOhm logic level MOSFET in LFPAK56D -- BUK9K31-100LX Dual N-channel 100 V, 35 mOhm logic level MOSFET in LFPAK56D -- BUK9K35-100LX Dual N-channel 100 V, 61 mOhm logic level MOSFET in LFPAK56D -- BUK9K61-100LX Dual N-channel 80 V, 12 mOhm logic level MOSFET in LFPAK56D -- BUK9K12-80LX Dual N-channel 80 V, 49 mOhm logic level MOSFET in LFPAK56D -- BUK9K49-80LX	Dual N-channel logic level MOSFET in an LFPAK56D (Dual Power-SO8) package. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and...
30 V, 200 mA dual P-channel Trench MOSFET -- NX3008PBKS,115	Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold...
30 V, 220 mA dual P-channel Trench MOSFET -- NX3008PBKV,115	Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching...
Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology -- BUK9K25-40RAX Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology -- BUK9K13-60RAX Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology -- BUK9K35-60RAX Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology -- BUK9K52-60RAX	Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive...
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D -- BUK9K13-40HX	Dual, Logic level N-channel MOSFET in an LFPAK56D package, using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications...
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) -- BUK9V13-40HX	Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity PCB shrinkage through reduced component footprint for 3-phase motor drive Improved system level Rth(j-amb) due to...
N-channel TrenchMOS intermediate level FET -- PMBF170,215 N-channel TrenchMOS intermediate level FET -- PMBF170,235	Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications...
N-channel TrenchMOS logic level FET -- BUK9Y14-40B,115	Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate...
N-channel TrenchMOS logic level FET -- BUK9606-55A,118 N-channel TrenchMOS logic level FET -- BUK9620-55A,118 N-channel TrenchMOS logic level FET -- BUK9628-100A,118 N-channel TrenchMOS logic level FET -- BUK9635-55A,118 N-channel TrenchMOS logic level FET -- BUK9640-100A,118 N-channel TrenchMOS logic level FET -- BUK9675-100A,118 N-channel TrenchMOS logic level FET -- BUK9675-55A,118 N-channel TrenchMOS logic level FET -- BUK98150-55A/CUF N-channel TrenchMOS logic level FET -- BUK98180-100A/CUX N-channel TrenchMOS logic level FET -- BUK9832-55A/CUX N-channel TrenchMOS logic level FET -- BUK9875-100A/CUX N-channel TrenchMOS logic level FET -- BUK9880-55A/CUX N-channel TrenchMOS logic level FET -- BUK9Y09-40B,115 N-channel TrenchMOS logic level FET -- BUK9Y104-100B,115 N-channel TrenchMOS logic level FET -- BUK9Y19-55B,115 N-channel TrenchMOS logic level FET -- BUK9Y19-75B,115 N-channel TrenchMOS logic level FET -- BUK9Y27-40B,115 N-channel TrenchMOS logic level FET -- BUK9Y30-75B,115 N-channel TrenchMOS logic level FET -- BUK9Y40-55B,115 N-channel TrenchMOS logic level FET -- BUK9Y58-75B,115	Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in...
N-channel TrenchMOS logic level FET -- PHB21N06LT,118 N-channel TrenchMOS logic level FET -- PHB32N06LT,118	Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications...
N-channel TrenchMOS logic level FET -- BUK9Y53-100B,115	Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate...
Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) -- BUK9Q12-40HJ Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) -- BUK9Q20-40HJ	Logic level N-Channel MOSFET in a compact MLPAK33-WF (SOT8002-3D) package using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
N-channel 100 V, 60 mOhm logic level MOSFET in LFPAK33 -- BUK9M60-100LX	Logic level N-channel MOSFET in a LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features...
100 V, 16 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q16-100LJ 100 V, 19 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q19-100LJ 100 V, 25 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q25-100LJ 100 V, 32 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q32-100LJ 100 V, 39 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q39-100LJ 100 V, 50 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q50-100LJ 80 V, 14 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q14-80LJ 80 V, 17 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q17-80LJ 80 V, 22 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q22-80LJ 80 V, 28 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q28-80LJ 80 V, 34 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q34-80LJ 80 V, 45 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q45-80LJ	Logic level N-channel MOSFET in a small MLPAK33‑WF package using Trench12 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and...
Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) -- BUK9Q4R6-40HJ Logic level N-Channel MOSFET in MLPAK33-WF (SOT8002-3D) -- BUK9Q7R0-40HJ	Logic level N-Channel MOSFET in a small MLPAK33-WF (SOT8002-3D) package using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
Logic level N-Channel MOSFET in MLPAK56-WF (SOT8038-2) -- BUK9R4R5-40HJ	Logic level N-Channel MOSFET in a small MLPAK56-WF (SOT8038-2) package, using Trench 9 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
N-channel TrenchMOS logic level FET -- BUK9611-80E,118 N-channel TrenchMOS logic level FET -- BUK9614-60E,118 N-channel TrenchMOS logic level FET -- BUK961R6-40E,118 N-channel TrenchMOS logic level FET -- BUK962R5-60E,118 N-channel TrenchMOS logic level FET -- BUK9637-100E,118 N-channel TrenchMOS logic level FET -- BUK963R3-60E,118 N-channel TrenchMOS logic level FET -- BUK964R2-80E,118 N-channel TrenchMOS logic level FET -- BUK965R8-100E,118 N-channel TrenchMOS logic level FET -- BUK966R5-60E,118 N-channel TrenchMOS logic level FET -- BUK969R0-60E,118 N-channel TrenchMOS logic level FET -- BUK969R3-100E,118	Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and...
N-channel 100 V, 120 mΩ logic level MOSFET in LFPAK33 -- BUK9M120-100EX N-channel 100 V, 156 mΩ logic level MOSFET in LFPAK33 -- BUK9M156-100EX N-channel 100 V, 34 mΩ logic level MOSFET in LFPAK33 -- BUK9M34-100EX N-channel 100 V, 43 mΩ logic level MOSFET in LFPAK33 -- BUK9M43-100EX N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 -- BUK9M10-30EX N-channel 30 V, 17 mΩ logic level MOSFET in LFPAK33 -- BUK9M17-30EX N-channel 30 V, 5.2 mΩ logic level MOSFET in LFPAK33 -- BUK9M5R2-30EX N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33 -- BUK9M6R6-30EX N-channel 40 V, 11 mΩ logic level MOSFET in LFPAK33 -- BUK9M11-40EX N-channel 40 V, 14 mΩ logic level MOSFET in LFPAK33 -- BUK9M14-40EX N-channel 40 V, 24 mΩ logic level MOSFET in LFPAK33 -- BUK9M24-40EX N-channel 40 V, 52 mΩ logic level MOSFET in LFPAK33 -- BUK9M52-40EX N-channel 40 V, 7.2 mΩ logic level MOSFET in LFPAK33 -- BUK9M7R2-40EX N-channel 40 V, 9.1 mΩ logic level MOSFET in LFPAK33 -- BUK9M9R1-40EX N-channel 60 V, 12 mΩ logic level MOSFET in LFPAK33 -- BUK9M12-60EX N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK33 -- BUK9M15-60EX N-channel 60 V, 19 mΩ logic level MOSFET in LFPAK33 -- BUK9M19-60EX N-channel 60 V, 24 mΩ logic level MOSFET in LFPAK33 -- BUK9M24-60EX N-channel 60 V, 42 mΩ logic level MOSFET in LFPAK33 -- BUK9M42-60EX N-channel 60 V, 53 mΩ logic level MOSFET in LFPAK33 -- BUK9M53-60EX N-channel 60 V, 85 mΩ logic level MOSFET in LFPAK33 -- BUK9M85-60EX N-channel 80 V, 23 mΩ logic level MOSFET in LFPAK33 -- BUK9M23-80EX N-channel 80 V, 28 mΩ logic level MOSFET in LFPAK33 -- BUK9M28-80EX N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33 -- BUK9M35-80EX	Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
N-channel 100 V, 16 mOhm logic level MOSFET in LFPAK33 -- BUK9M16-100LX N-channel 80 V, 13 mOhm logic level MOSFET in LFPAK33 -- BUK9M13-80LX N-channel 80 V, 24 mOhm logic level MOSFET in LFPAK33 -- BUK9M24-80LX N-channel 80 V, 48 mOhm logic level MOSFET in LFPAK33 -- BUK9M48-80LX	Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features...
N-channel 60 V, 4.8 mOhm logic level MOSFET in LFPAK56 using Repetitive Avalanche technology -- BUK9Y4R8-60RAX	Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in...
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 -- BUK9Y113-100E,115 N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 -- BUK9Y12-100E,115 N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y15-100E,115 N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 -- BUK9Y153-100E,115 N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 -- BUK9Y19-100E,115 N-channel 100 V, 22 mΩ logic level MOSFET in LFPAK56 -- BUK9Y22-100E,115 N-channel 100 V, 38 mΩ logic level MOSFET in LFPAK56 -- BUK9Y38-100E,115 N-channel 100 V, 65 mΩ logic level MOSFET in LFPAK56 -- BUK9Y65-100E,115 N-channel 40 V, 21 mΩ logic level MOSFET in LFPAK56 -- BUK9Y21-40E,115 N-channel 40 V, 29 mΩ logic level MOSFET in LFPAK56 -- BUK9Y29-40E,115 N-channel 40 V, 4.4 mΩ logic level MOSFET in LFPAK56 -- BUK9Y4R4-40E,115 N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y15-60E,115 N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y15-60E/A004X N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 -- BUK9Y25-60E,115 N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 -- BUK9Y25-60E/A004X N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 -- BUK9Y4R8-60E,115 N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56 -- BUK9Y43-60E,115 N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56 -- BUK9Y43-60E/A004X N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56 -- BUK9Y59-60E,115 N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56 -- BUK9Y59-60E/A004X N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 -- BUK9Y7R2-60E,115 N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56 -- BUK9Y8R7-60E,115 N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56 -- BUK9Y107-80EX N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56 -- BUK9Y11-80EX N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 -- BUK9Y25-80E,115 N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 -- BUK9Y41-80E,115 N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56 -- BUK9Y72-80E,115 N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56 -- BUK9Y8R5-80EX N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y14-80E,115	Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive...
N-channel 40 V, 12 mΩ logic level MOSFET in LFPAK56 -- BUK9Y12-40E,115 N-channel 40 V, 3.8 mOhm logic level MOSFET in LFPAK56 -- BUK9Y3R5-40E,115 N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 -- BUK9Y7R6-40E,115 N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 -- BUK9Y7R6-40E/DMANX N-channel 60 V, 6.0 mOhm logic level MOSFET in LFPAK56 -- BUK9Y6R0-60E,115	Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 -- BUK9Y3R0-40E,115 N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 -- BUK9Y3R0-40E/DMANX	Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features...
60 V, N-channel Trench MOSFET -- NX7002BKHH	N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
50 V, N-channel Trench MOSFET -- NX5008NBKHH 60 V, N-channel Trench MOSFET -- NX138BKHH	N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast...
60 V, N-channel Trench MOSFET -- NX7002BKMYL	N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
50 V, N-channel Trench MOSFET -- NX5008NBKMYL 60 V, N-channel Trench MOSFET -- NX138BKMYL	N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast...
60 V, N-channel Trench MOSFET -- NX7002BKMBYL	N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
30 V, N-channel Trench MOSFET -- NX3020NAKQB-QZ	N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range...
30 V, N-channel Trench MOSFET -- PMCB60XNEYL	N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching...
12 V, N-channel Trench MOSFET -- PMCA14UNX 12 V, N-channel Trench MOSFET -- PMCA14UNYL	N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching...
60 V, N-channel Trench MOSFET -- NX138AKHH	N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
60 V, N-channel Trench MOSFET -- NX138AKMYL	N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching...
40 V, N-channel Trench MOSFET -- BUK9D23-40EX	N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj =...
60 V, 360 mA N-channel Trench MOSFET -- NX5020UNBKR 60 V, N-channel Trench MOSFET -- NX7002BKR 60 V, N-channel Trench MOSFET -- NX7002BKVL	N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
60 V, N-channel Trench MOSFET -- NX138AKR 60 V, N-channel Trench MOSFET -- NX138AKVL 60 V, single N-channel Trench MOSFET -- NX138BKR 60 V, single N-channel Trench MOSFET -- NX138BKVL	N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench...
30 V, 400 mA N-channel Trench MOSFET -- NX3008NBK,215 30 V, 400 mA N-channel Trench MOSFET -- NX3008NBKVL	N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench...
30 V, single N-channel Trench MOSFET -- NX3020NAK,215 60 V, single N-channel Trench MOSFET -- NX7002AK,215 60 V, single N-channel Trench MOSFET -- NX7002AKVL 60 V, single N-channel Trench MOSFET -- NX7002AKZ	N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ESD...
30 V, N-channel Trench MOSFET -- NX3020NAK-QR	N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj =...
20 V, N-channel Trench MOSFET -- NXV40UNR 30 V, N-channel Trench MOSFET -- NXV55UNR 60 V, N-channel Trench MOSFET -- NX6008NBKR	N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET...
30 V, 180 mA N-channel Trench MOSFET -- NX3020NAKW,115 60 V, single N-channel Trench MOSFET -- NX7002AKW,115	N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology ESD...
60 V, N-channel Trench MOSFET -- BUK9Q29-60EJ	N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET...
60 V, single N-channel Trench MOSFET -- NX7002BKWX	N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench...
60 V, N-channel Trench MOSFET -- NX138BKWF 60 V, N-channel Trench MOSFET -- NX138BKWX 60 V, N-channel Trench MOSFET -- NX6008NBKWX	N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching...
30 V, N-channel Trench MOSFET -- NX3020NAKW-QX	N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range T...
30 V, 350 mA N-channel Trench MOSFET -- NX3008NBKW,115	N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage...
50 V, N-channel Trench MOSFET -- NX5020UNBKWX	N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very fast...
60 V, P-channel Trench MOSFET -- BUK9D120-60PX	P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range...
30 V, P-channel Trench MOSFET -- NX3008NBKMB,315	P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold...
20 V, 2 A P-channel Trench MOSFET -- NX2301P,215 20 V, 2 A P-channel Trench MOSFET -- NX2301PVL	P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits 1.8 V RDSon rated for Low...
30 V, 230 mA P-channel Trench MOSFET -- NX3008PBK,215 30 V, 230 mA P-channel Trench MOSFET -- NX3008PBKVL	P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench...
30 V, P-channel Trench MOSFET -- NXV90EPR	P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology...
20 V, P-channel Trench MOSFET -- NXV65UPR 20 V, P-channel Trench MOSFET -- NXV75UPR 30 V, P-channel Trench MOSFET -- NXV100XPR	P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET...
30 V, 200 mA P-channel Trench MOSFET -- NX3008PBKW,115	P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench...
Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology -- BUK9M20-60ELX Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology -- BUK9M31-60ELX Single N-channel 60 V, 44 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology -- BUK9M67-60ELX	Single, logic level, N-channel MOSFET in LFPAK33 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag...
Single N-channel 60 V, 15 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology -- BUK9Y22-60ELX Single N-channel 60 V, 4.5 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology -- BUK9Y7R0-60ELX Single N-channel 60 V, 5.6 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology -- BUK9Y8R8-60ELX Single N-channel 60 V, 7.9 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology -- BUK9Y13-60ELX	Single, logic level, N-channel MOSFET in LFPAK56 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag...
N-channel TrenchMOS standard level FET -- PHB27NQ10T,118 N-channel TrenchMOS standard level FET -- PHB29N08T,118 N-channel TrenchMOS standard level FET -- PHB45NQ10T,118 N-channel TrenchMOS standard level FET -- PHB47NQ10T,118 N-channel TrenchMOS standard level FET -- PHT6NQ10T,135	Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications...
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package -- GAN041-650WSBQ	The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology...
650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package -- GAN080-650EBEZ	The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode...
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package -- GAN140-650FBEZ	The GAN140-650FBE is a general purpose 650 V, 140 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode...
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) -- GAN3R2-100CBEAZ	The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device...
1200 V, 17 mOhm, N-channel SiC MOSFET -- NSF017120T2A0J	The NSF017120T2A0 is a Silicon Carbide based 1200V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast...
1200 V, 30 mΩ, N-channel SiC MOSFET -- NSF030120D7A0J	The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 30 mΩ, N-channel SiC MOSFET for automotive applications -- NSF030120D7A0-QJ	The NSF030120D7A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 30 mOhm, N-channel SiC MOSFET -- NSF030120L3A0Q	The NSF030120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 30 mΩ, N-channel SiC MOSFET -- NSF030120L4A0Q	The NSF030120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 30 mOhm, N-channel SiC MOSFET -- NSF030120T2A0J	The NSF030120T2A0 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with...
1200 V, 40 mΩ, N-channel SiC MOSFET -- NSF040120D7A0J	The NSF040120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 40 mΩ, N-channel SiC MOSFET -- NSF040120D7A1J	The NSF040120D7A1 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications -- NSF040120D7A1-QJ	The NSF040120D7A1-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 40 mOhm, N-channel SiC MOSFET -- NSF040120L3A0Q	The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 40 mΩ, N-channel SiC MOSFET -- NSF040120L4A0Q	The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 40 mΩ, N-channel SiC MOSFET -- NSF040120L4A1Q	The NSF040120L4A1 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 40 mOhm, N-channel SiC MOSFET -- NSF040120T2A1J	The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with...
1200 V, 60 mOhm, N-channel SiC MOSFET -- NSF060120D7A0J	The NSF060120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 60 mOhm N-channel SiC MOSFET for automotive applications -- NSF060120D7A0-QJ	The NSF060120D7A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
1200 V, 60 mΩ, N-channel SiC MOSFET -- NSF060120L3A0Q	The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 60 mOhm, N-channel SiC MOSFET -- NSF060120L4A0Q	The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 60 mOhm, N-channel SiC MOSFET for automotive applications -- NSF060120T2A0J	The NSF060120T2A0 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with...
1200 V, 80 mOhm, N-channel SiC MOSFET -- NSF080120D7A0J	The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined...
SiC MOSFET with 80 mΩ in TO-247-3 -- NSF080120L3A0Q	The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
1200 V, 80 mOhm, N-channel SiC MOSFET -- NSF080120L4A0Q	The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability...
N-channel TrenchMOS ultra low level FET -- PH2520U,115 N-channel TrenchMOS ultra low level FET -- PH2925U,115	Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial...

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