Nexperia B.V. Single FETs, MOSFETs BUK9E06-55A,127

Description
N-Channel 55V 75A (Tc) 300W (Tc) Through Hole I2PAK
  • Single FETs, MOSFETs - 1727-7229-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK9E06-55A,127 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 55V 75A (Tc) 300W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 1727-7229-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7229-ND
Single FETs, MOSFETs 1727-7229-ND
N-Channel 55V 75A (Tc) 300W (Tc) Through Hole I2PAK

N-Channel 55V 75A (Tc) 300W (Tc) Through Hole I2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK9E06-55A,127 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK9E06-55A,127
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK9E06-55A,127
MOSFET N-CH 55V 75A I2PAK

MOSFET N-CH 55V 75A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number 1727-7229-ND BUK9E06-55A,127
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
GaAs Fet Switches - KS206 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS206
Specs
Operating Frequency 20 to 4000 MHz
View Details
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-01 - Qorvo
Qorvo
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-01
Specs
Transistor Technology / Material GaN on SiC
Package Type Die
Power Gain 18 dB
View Details
3 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF4905S - 1149795-AUIRF4905S - Win Source Electronics
Infineon Technologies AG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF4905S
AUIRF4905S
Specs
Package Type SOT3
View Details
6 suppliers