Nexperia B.V. 1200 V, 30 mΩ, N-channel SiC MOSFET NSF030120D7A0J

Description
The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives
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Description
The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives
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Suppliers

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Product
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Supplier Links
1200 V, 30 mΩ, N-channel SiC MOSFET - NSF030120D7A0J - Nexperia B.V.
Nijmegen, Netherlands
1200 V, 30 mΩ, N-channel SiC MOSFET
NSF030120D7A0J
1200 V, 30 mΩ, N-channel SiC MOSFET NSF030120D7A0J
The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Faster commutation and improved switching due to the additional Kelvin source pin Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives

The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.

Features and benefits

  • Excellent RDSon temperature stability
  • Very low switching losses
  • Fast reverse recovery
  • Fast switching speed
  • Temperature independent turn-off switching losses
  • Very fast and robust intrinsic body diode
  • Faster commutation and improved switching due to the additional Kelvin source pin

Applications

  • E-vehicle charging infrastructure
  • Photovoltaic inverters
  • Switch mode power supply
  • Uninterruptable power supply
  • Motor drives
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-NSF030120D7A0JDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NSF030120D7A0JDKR-ND
Single FETs, MOSFETs 1727-NSF030120D7A0JDKR-ND
SICFET N-CH 1200V 67A TO263

SICFET N-CH 1200V 67A TO263

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Single FETs, MOSFETs - 1727-NSF030120D7A0JCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NSF030120D7A0JCT-ND
Single FETs, MOSFETs 1727-NSF030120D7A0JCT-ND
SICFET N-CH 1200V 67A TO263

SICFET N-CH 1200V 67A TO263

Buy Now Datasheet
Single FETs, MOSFETs - 1727-NSF030120D7A0JTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NSF030120D7A0JTR-ND
Single FETs, MOSFETs 1727-NSF030120D7A0JTR-ND
SICFET N-CH 1200V 67A TO263

SICFET N-CH 1200V 67A TO263

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MOSFETs - 219443 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219443
MOSFETs 219443
N-Channel MOSFET, 30V, 12A, SO-8

N-Channel MOSFET, 30V, 12A, SO-8

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey RS Components, Ltd.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number NSF030120D7A0J 1727-NSF030120D7A0JDKR-ND 219443
Product Name 1200 V, 30 mΩ, N-channel SiC MOSFET Single FETs, MOSFETs MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts
IDSS 67000 milliamps
VGS(off) 22 volts
PD 306 milliwatts
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