Nexperia B.V. 1200 V, 40 mOhm, N-channel SiC MOSFET NSF040120L3A0Q

Description
The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives
  • 1200 V, 40 mOhm, N-channel SiC MOSFET - NSF040120L3A0Q - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-NSF040120L3A0-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives
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Suppliers

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Product
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Supplier Links
1200 V, 40 mOhm, N-channel SiC MOSFET - NSF040120L3A0Q - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
1200 V, 40 mOhm, N-channel SiC MOSFET
NSF040120L3A0Q
1200 V, 40 mOhm, N-channel SiC MOSFET NSF040120L3A0Q
The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives

The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.

Features and benefits

  • Excellent RDSon temperature stability
  • Very low switching losses
  • Fast reverse recovery
  • Fast switching speed
  • Temperature independent turn-off switching losses
  • Very fast and robust intrinsic body diode

Applications

  • E-vehicle charging infrastructure
  • Photovoltaic inverters
  • Switch mode power supply
  • Uninterruptable power supply
  • Motor drives
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-NSF040120L3A0-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NSF040120L3A0-ND
Single FETs, MOSFETs 1727-NSF040120L3A0-ND
SICFET N-CH 1200V 65A TO247-3

SICFET N-CH 1200V 65A TO247-3

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Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number NSF040120L3A0Q 1727-NSF040120L3A0-ND
Product Name 1200 V, 40 mOhm, N-channel SiC MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts
IDSS 65000 milliamps
VGS(off) 22 volts
PD 313 milliwatts
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