The NSF080120L4A0 is a 1200 V, 80 mΩ N-channel silicon carbide MOSFET in a TO-247-4L plastic package for through-hole mounting, featuring a Kelvin source pin for improved switching performance. It has a continuous drain current of 35 A at 25 °C and 25 A at 100 °C, with a peak pulsed drain current of 80 A. The drain-source on-state resistance is 80 mΩ at 25 °C and 15 V gate voltage, increasing to 110 mΩ at 175 °C. Thermal resistance from junction to case is 0.68-0.82 K/W. The device supports a maximum junction temperature of 175 °C and meets IEC 60134 for limiting values.
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
Features and benefits
Applications
SICFET N-CH 1200V 35A TO247-4
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | NSF080120L4A0Q | 1727-NSF080120L4A0Q-ND |
| Product Name | 1200 V, 80 mOhm, N-channel SiC MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 1200 volts | |
| IDSS | 35000 milliamps | |
| VGS(off) | 22 volts | |
| PD | 183 milliwatts |
