N-channel TrenchMOS logic level FET for automotive applications, housed in a D2PAK (SOT404) package measuring 11.0 mm by 10.3 mm with a 15.8 mm lead pitch. Rated for 100 V drain-source voltage and 31 A continuous drain current at 25 °C, with a maximum junction temperature of 175 °C and total power dissipation of 96 W. Features a drain-source on-state resistance of 31 mΩ at 25 °C and 102 mΩ at 175 °C, gate-source threshold voltage ranging from 0.5 V to 2.45 V across temperature, and is AEC-Q101 compliant with repetitive avalanche capability. The gate-source threshold voltage is guaranteed above 0.5 V at 175 °C, enabling true logic-level operation. The package includes a mounting base connected internally to the drain terminal.
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025390-BUK9637-100E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 96W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 1mA
Max Gate Charge: 22.8nC @ 5V
Max Input Capacitance: 2681pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 36 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
N-Channel 100V 31A (Tc) 96W (Tc) Surface Mount D2PAK
N-Channel 100V 31A (Tc) 96W (Tc) Surface Mount D2PAK
N-Channel 100V 31A (Tc) 96W (Tc) Surface Mount D2PAK
N-channel TrenchMOS logic level FET D2PAK 3-Pin Product overview: BUK9637-100E,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9637-100E,118
Power Field-Effect Transistor, 31A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MOSFET N-CH 100V 31A D2PAK
MOSFET Transistor, N Channel, 31 A, 100 V, 0.031 ohm, 5 V, 1.7 V RoHS Compliant: Yes
| Nexperia B.V. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9637-100E,118 | 1025390-BUK9637-100E,118 | 1727-1097-6-ND | 278-BUK9637-100E,118 | BUK9637-100E,118 | BUK9637-100E,118 | 53W8664 |
| Product Name | N-channel TrenchMOS logic level FET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9637-100E,118 | Single FETs, MOSFETs | N-Channel MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 31 A, 100 V, 0.031 Ohm, 5 V, 1.7 V Rohs Compliant Nexperia | |
| Package Type | SOT404 SOT404 | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT404 | -55degC ~ 175degC (TJ) | TO-3 | |
| Transistor Grade / Operating Range | Automotive | Automotive | |||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts |
