The NSF040120T2A1 is a 1200 V N-channel silicon carbide MOSFET in a 7-pin X.PAK plastic package, measuring 14.0 mm × 11.8 mm × 3.5 mm, designed for surface-mounted topside-cooled applications. It features a drain-source on-state resistance of 40 mΩ at 25 °C, a continuous drain current of 55 A at 25 °C and 39 A at 100 °C, and a peak drain current of 120 A. The device exhibits low switching losses, fast reverse recovery, and a robust intrinsic body diode, enhanced by a Kelvin source pin for improved switching performance. The junction temperature range is -55 °C to 175 °C, with a thermal resistance from junction to case of 0.45 to 0.59 K/W. It meets the IEC 60134 absolute maximum rating system.
The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NSF040120T2A1J |
| Product Name | 1200 V, 40 mOhm, N-channel SiC MOSFET |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 1200 volts |
| IDSS | 55000 milliamps |
| VGS(off) | 22 volts |
