Nexperia B.V. N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E BUK9J0R9-40HX

Description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding environments Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
  • N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E - BUK9J0R9-40HX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BUK9J0R9-40HXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK9J0R9-40HXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK9J0R9-40HXTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1340296-BUK9J0R9-40HX - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - BUK9J0R9-40HX - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, Aec-Q101, N-Ch, 40V, Sot-1023; Transistor Polarity Nexperia - 65AC5902 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding environments Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
Request a Quote
Datasheet
Datasheet Summary
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N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E package, automotive qualified to AEC-Q101 with a 175 °C junction temperature rating. The device features Trench 9 superjunction technology, a copper clip design for reduced R_DS(on) and improved current spreading, and Gull Wing leads for high board-level reliability. It supports a continuous drain current of up to 220 A at 25 °C and a peak drain current of 600 A, with a maximum power dissipation of 500 W. Thermal resistance from junction to mounting base is 0.21 to 0.3 K/W. The on-state resistance is 0.53 to 0.94 mΩ at 25 °C with V_GS = 10 V and I_D = 25 A. Avalanche energy rating is 290 mJ. The package is SOT1023, with dimensions of 5.3 mm by 6.2 mm and a lead pitch of 1.27 mm.

Datasheet Summary
Powered by GS/AI

N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E package, automotive qualified to AEC-Q101 with a 175 °C junction temperature rating. The device features Trench 9 superjunction technology, a copper clip design for reduced R_DS(on) and improved current spreading, and Gull Wing leads for high board-level reliability. It supports a continuous drain current of up to 220 A at 25 °C and a peak drain current of 600 A, with a maximum power dissipation of 500 W. Thermal resistance from junction to mounting base is 0.21 to 0.3 K/W. The on-state resistance is 0.53 to 0.94 mΩ at 25 °C with V_GS = 10 V and I_D = 25 A. Avalanche energy rating is 290 mJ. The package is SOT1023, with dimensions of 5.3 mm by 6.2 mm and a lead pitch of 1.27 mm.

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E - BUK9J0R9-40HX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E
BUK9J0R9-40HX
N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E BUK9J0R9-40HX
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding environments Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.

Features and benefits

  • Fully automotive qualified to AEC-Q101:
    • 175 °C rating suitable for thermally demanding environments

Applications

  • 12 V automotive systems
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BUK9J0R9-40HXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK9J0R9-40HXDKR-ND
Single FETs, MOSFETs 1727-BUK9J0R9-40HXDKR-ND
BUK9J0R9-40H/SOT1023 /4 LEADS

BUK9J0R9-40H/SOT1023/4 LEADS

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK9J0R9-40HXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK9J0R9-40HXCT-ND
Single FETs, MOSFETs 1727-BUK9J0R9-40HXCT-ND
BUK9J0R9-40H/SOT1023 /4 LEADS

BUK9J0R9-40H/SOT1023/4 LEADS

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK9J0R9-40HXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK9J0R9-40HXTR-ND
Single FETs, MOSFETs 1727-BUK9J0R9-40HXTR-ND
220A (Tc)

220A (Tc)

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
MOSFET Transistor
278-BUK9J0R9-40HX
MOSFET Transistor 278-BUK9J0R9-40HX
BUK9J0R9-40H/SOT1023 /4 LEADS Product overview: BUK9J0R9-40HX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9J0R9-40HX can be used for catalog matching and distributor lookup.

BUK9J0R9-40H/SOT1023/4 LEADS Product overview: BUK9J0R9-40HX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9J0R9-40HX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1340296-BUK9J0R9-40HX - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1340296-BUK9J0R9-40HX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1340296-BUK9J0R9-40HX
Win Source Part Number: 1340296-BUK9J0R9-40H X Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Automotive, AEC-Q100 Package: Tape & Reel Standard Package: 1,500 Vgs (Max): +16V, -10V ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Base Product Number: BUK9J0 Current - Continuous Drain (Id) @ 25°C: 220A (Tc)

Win Source Part Number: 1340296-BUK9J0R9-40HX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Automotive, AEC-Q100
Package: Tape & Reel
Standard Package: 1,500
Vgs (Max): +16V, -10V
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Base Product Number: BUK9J0
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK9J0R9-40HX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK9J0R9-40HX
BUK9J0R9-40H/SOT1023 /4 LEADS

BUK9J0R9-40H/SOT1023/4 LEADS

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
BUK9J0R9-40HX
MOSFET BUK9J0R9-40HX
MOSFET BUK9J0R9-40H/SOT1023 /4 LEADS

MOSFET BUK9J0R9-40H/SOT1023/4 LEADS

Buy Now Datasheet
Single FETs, MOSFETs - BUK9J0R9-40HX - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BUK9J0R9-40HX
Single FETs, MOSFETs BUK9J0R9-40HX
BUK9J0R9-40H/SOT1023 /4 LEADS

BUK9J0R9-40H/SOT1023/4 LEADS

Supplier's Site Datasheet
Mosfet, Aec-Q101, N-Ch, 40V, Sot-1023; Transistor Polarity Nexperia - 65AC5902 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 40V, Sot-1023; Transistor Polarity Nexperia
65AC5902
Mosfet, Aec-Q101, N-Ch, 40V, Sot-1023; Transistor Polarity Nexperia 65AC5902
MOSFET, AEC-Q101, N-CH, 40V, SOT-1023; Transistor Polarity:N Channel; Continuous Drain Current Id:220A; Drain Source Voltage Vds:40V; On Resistance Rds(on):760µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.66V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 40V, SOT-1023; Transistor Polarity:N Channel; Continuous Drain Current Id:220A; Drain Source Voltage Vds:40V; On Resistance Rds(on):760µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.66V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global) Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK9J0R9-40HX 1727-BUK9J0R9-40HXDKR-ND 278-BUK9J0R9-40HX 1340296-BUK9J0R9-40HX BUK9J0R9-40HX BUK9J0R9-40HX BUK9J0R9-40HX 65AC5902
Product Name N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 40V, Sot-1023; Transistor Polarity Nexperia
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 40 volts 40 volts
IDSS 220000 milliamps 220000 milliamps 220000 milliamps
VGS(off) 16 volts
PD 500 milliwatts 500 milliwatts
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