Nexperia B.V. 100 V, 50 mOhm logic level N-channel MOSFET in MLPAK33 BUK9Q50-100LJ

Description
Logic level N-channel MOSFET in a small MLPAK33‑WF package using Trench12 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Logic-level compatible Trench12 MOSFET technology Efficient switching with soft body-diode recovery Automotive qualified to AEC-Q101 at 175°C Side-wettable flanks for robust solder joints and automatic optical inspection Applications LED lighting DC-to-DC conversion Solenoid, motor and other load switching Circuit protection
  • 100 V, 50 mOhm logic level N-channel MOSFET in MLPAK33 - BUK9Q50-100LJ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BUK9Q50-100LJCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK9Q50-100LJTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK9Q50-100LJDKR-ND - DigiKey
    DigiKey
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Description
Logic level N-channel MOSFET in a small MLPAK33‑WF package using Trench12 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Logic-level compatible Trench12 MOSFET technology Efficient switching with soft body-diode recovery Automotive qualified to AEC-Q101 at 175°C Side-wettable flanks for robust solder joints and automatic optical inspection Applications LED lighting DC-to-DC conversion Solenoid, motor and other load switching Circuit protection
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Datasheet
Datasheet Summary
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100 V, 50 mOhm logic level N-channel MOSFET in an MLPAK33-WF package measuring 3.3 x 3.3 x 0.8 mm, designed for automotive applications and qualified to AEC-Q101 at 175°C. The device features side-wettable flanks for reliable solder joints and optical inspection, with a drain-source on-state resistance of 39 to 50 mΩ at 25°C and 10 V gate bias. It supports continuous drain currents up to 16 A at 25°C, with a total power dissipation of 27 W. The junction-to-mounting-base thermal resistance is 3.7 to 5.5 K/W, and it exhibits soft body-diode recovery for improved switching performance.

Datasheet Summary
Powered by GS/AI

100 V, 50 mOhm logic level N-channel MOSFET in an MLPAK33-WF package measuring 3.3 x 3.3 x 0.8 mm, designed for automotive applications and qualified to AEC-Q101 at 175°C. The device features side-wettable flanks for reliable solder joints and optical inspection, with a drain-source on-state resistance of 39 to 50 mΩ at 25°C and 10 V gate bias. It supports continuous drain currents up to 16 A at 25°C, with a total power dissipation of 27 W. The junction-to-mounting-base thermal resistance is 3.7 to 5.5 K/W, and it exhibits soft body-diode recovery for improved switching performance.

Suppliers

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Supplier Links
100 V, 50 mOhm logic level N-channel MOSFET in MLPAK33 - BUK9Q50-100LJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
100 V, 50 mOhm logic level N-channel MOSFET in MLPAK33
BUK9Q50-100LJ
100 V, 50 mOhm logic level N-channel MOSFET in MLPAK33 BUK9Q50-100LJ
Logic level N-channel MOSFET in a small MLPAK33‑WF package using Trench12 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits Logic-level compatible Trench12 MOSFET technology Efficient switching with soft body-diode recovery Automotive qualified to AEC-Q101 at 175°C Side-wettable flanks for robust solder joints and automatic optical inspection Applications LED lighting DC-to-DC conversion Solenoid, motor and other load switching Circuit protection

Logic level N-channel MOSFET in a small MLPAK33‑WF package using Trench12 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.

Features and benefits

  • Logic-level compatible
  • Trench12 MOSFET technology
  • Efficient switching with soft body-diode recovery
  • Automotive qualified to AEC-Q101 at 175°C
  • Side-wettable flanks for robust solder joints and automatic optical inspection

Applications

  • LED lighting
  • DC-to-DC conversion
  • Solenoid, motor and other load switching
  • Circuit protection
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BUK9Q50-100LJCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK9Q50-100LJCT-ND
Single FETs, MOSFETs 1727-BUK9Q50-100LJCT-ND
BUK9Q50-100L/SOT8002 /MLPAK33

BUK9Q50-100L/SOT8002/MLPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK9Q50-100LJTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK9Q50-100LJTR-ND
Single FETs, MOSFETs 1727-BUK9Q50-100LJTR-ND
BUK9Q50-100L/SOT8002 /MLPAK33

BUK9Q50-100L/SOT8002/MLPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK9Q50-100LJDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK9Q50-100LJDKR-ND
Single FETs, MOSFETs 1727-BUK9Q50-100LJDKR-ND
BUK9Q50-100L/SOT8002 /MLPAK33

BUK9Q50-100L/SOT8002/MLPAK33

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BUK9Q50-100LJ 1727-BUK9Q50-100LJCT-ND
Product Name 100 V, 50 mOhm logic level N-channel MOSFET in MLPAK33 Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts
IDSS 16000 milliamps
VGS(off) 20 volts
PD 27 milliwatts
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