N-channel 100 V logic level MOSFET in an LFPAK33 (SOT1210) package, designed for high-performance automotive applications and qualified to AEC-Q101 standard. The device features a maximum drain-source voltage of 100 V, a continuous drain current of 29 A at 25 °C, and a typical on-state resistance of 29 mΩ at 5 V gate-source voltage and 25 °C. It supports repetitive avalanche ruggedness with a non-repetitive avalanche energy rating of 57.8 mJ and operates up to a junction temperature of 175 °C. The gate-source threshold voltage is guaranteed above 0.5 V at 175 °C, enabling true logic level operation. Thermal resistance from junction to mounting base is 1.58 to 1.89 K/W. The package is a plastic single-ended surface-mounted LFPAK33 with eight leads and a mounting base electrically connected to the drain.
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325313-BUK9M34-100E
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 79W (Tc)
Supplier Device Package: LFPAK33
Gate Charge (Qg) (Max) @ Vgs: 24.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: SOT-1210, 8-LFPAK33 (5-Lead)
ECCN: EAR99
Fake Threat In the Open Market: 72
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: BUK9M34-100EX-ND,172
Base Product Number: BUK9M34
Drive Voltage (Max Rds On, Min Rds On): 5V
RoHS Status: ROHS3 Compliant
BUK9M34-100E - N-channel 100 V, 34 mΩ logic level MOSFET in LFPAK33 Product overview: BUK9M34-100EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9M34-100EX can be used for catalog matching and distributor lookup.
N-Channel 100V 29A (Tc) 79W (Tc) Surface Mount LFPAK33
N-Channel 100V 29A (Tc) 79W (Tc) Surface Mount LFPAK33
N-Channel 100V 29A (Tc) 79W (Tc) Surface Mount LFPAK33
MOSFET N-CH 100V 29A LFPAK33
MOSFET, AEC-Q101, N-CH, 100V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET, AEC-Q101, N-CH, 100V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 29A LFPAK33
MOSFET BUK9M34-100E/MLFPAK/
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9M34-100EX | 1325313-BUK9M34-100EX | 278-BUK9M34-100EX | 1727-2579-2-ND | BUK9M34-100EX | 17AC9463 | BUK9M34-100EX | BUK9M34-100EX |
| Product Name | N-channel 100 V, 34 mΩ logic level MOSFET in LFPAK33 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 100 V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 100V, Sot-1210; Transistor Polarity Nexperia | Single FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 29000 milliamps | 29000 milliamps | 29000 milliamps | |||||
| VGS(off) | 10 volts | |||||||
| PD | 79 milliwatts | 79000 milliwatts | 79000 milliwatts |
