Nexperia B.V. Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology BUK9K13-60RAX

Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications.

Features and benefits

• Fully automotive qualified to AEC-Q101 at 175 °C
• Repetitive Avalanche rated to 30 °C T _j rise:
• Tested to 1 Bn avalanche events

Applications

• 12 V, 24 V and 48 V automotive systems
• Repetitive avalanche topologies
• Engine control
• Transmission control
• Actuator and auxiliary loads

Mosfet Array 2 N-Channel (Dual) 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Dual) 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Dual) 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Win Source Part Number: 1378028-BUK9K13-60RAX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 32 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D
Base Product Number: BUK9K13
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 64W (Ta)
Configuration: 2 N-Channel (Dual)

MOSFET 2N-CH 60V 40A LFPAK56D