Nexperia B.V. Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology BUK9K13-60RAX

Description
Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. Features and benefits Fully automotive qualified to AEC-Q101 at 175 °C Repetitive Avalanche rated to 30 °C T j rise: Tested to 1 Bn avalanche events Applications 12 V, 24 V and 48 V automotive systems Repetitive avalanche topologies Engine control Transmission control Actuator and auxiliary loads
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Description
Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. Features and benefits Fully automotive qualified to AEC-Q101 at 175 °C Repetitive Avalanche rated to 30 °C T j rise: Tested to 1 Bn avalanche events Applications 12 V, 24 V and 48 V automotive systems Repetitive avalanche topologies Engine control Transmission control Actuator and auxiliary loads
Request a Quote
Datasheet
Datasheet Summary
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Dual N-channel 60 V logic level MOSFET in an LFPAK56D (SOT1205) package, designed for automotive applications in 12 V, 24 V, and 48 V systems using repetitive avalanche topologies. The device is fully qualified to AEC-Q101 at 175 °C and rated for repetitive avalanche events up to 75.2 mJ with a junction temperature rise limited to 30 °C. It has a typical drain-source on-state resistance of 10 mΩ at 25 °C and 5 V gate-source voltage. The package features copper clip technology with gull wing leads for high manufacturability and AOI. Maximum continuous drain current is 40 A at 25 °C mounting base temperature. Thermal resistance from junction to mounting base is 2.36 K/W.

Datasheet Summary
Powered by GS/AI

Dual N-channel 60 V logic level MOSFET in an LFPAK56D (SOT1205) package, designed for automotive applications in 12 V, 24 V, and 48 V systems using repetitive avalanche topologies. The device is fully qualified to AEC-Q101 at 175 °C and rated for repetitive avalanche events up to 75.2 mJ with a junction temperature rise limited to 30 °C. It has a typical drain-source on-state resistance of 10 mΩ at 25 °C and 5 V gate-source voltage. The package features copper clip technology with gull wing leads for high manufacturability and AOI. Maximum continuous drain current is 40 A at 25 °C mounting base temperature. Thermal resistance from junction to mounting base is 2.36 K/W.

Suppliers

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Product
Description
Supplier Links
Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology - BUK9K13-60RAX - Nexperia B.V.
Nijmegen, Netherlands
Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology
BUK9K13-60RAX
Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology BUK9K13-60RAX
Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. Features and benefits Fully automotive qualified to AEC-Q101 at 175 °C Repetitive Avalanche rated to 30 °C T j rise: Tested to 1 Bn avalanche events Applications 12 V, 24 V and 48 V automotive systems Repetitive avalanche topologies Engine control Transmission control Actuator and auxiliary loads

Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications.

Features and benefits

  • Fully automotive qualified to AEC-Q101 at 175 °C
  • Repetitive Avalanche rated to 30 °C T j rise:
    • Tested to 1 Bn avalanche events

Applications

  • 12 V, 24 V and 48 V automotive systems
  • Repetitive avalanche topologies
  • Engine control
  • Transmission control
  • Actuator and auxiliary loads
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays - 1378028-BUK9K13-60RAX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
1378028-BUK9K13-60RAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays 1378028-BUK9K13-60RAX
Win Source Part Number: 1378028-BUK9K13-60RA X Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 32 pct. MSL Level: 1 (Unlimited) Mfr: Nexperia USA Inc. Series: Automotive, AEC-Q101 Package: Tape & Reel Product Status: Active Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D Base Product Number: BUK9K13 Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V FET Feature: Logic Level Gate Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Power - Max: 64W (Ta) Configuration: 2 N-Channel (Dual)

Win Source Part Number: 1378028-BUK9K13-60RAX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 32 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D
Base Product Number: BUK9K13
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 64W (Ta)
Configuration: 2 N-Channel (Dual)

Buy Now Datasheet
Singapore, Singapore
60V 40A MOSFET Transistor
289-BUK9K13-60RAX
60V 40A MOSFET Transistor 289-BUK9K13-60RAX
MOSFET 2N-CH 60V 40A LFPAK56D Product overview: BUK9K13-60RAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 40A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BUK9K13-60RAX can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 60V 40A LFPAK56D Product overview: BUK9K13-60RAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 40A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BUK9K13-60RAX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-BUK9K13-60RAXCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-BUK9K13-60RAXCT-ND
FET, MOSFET Arrays 1727-BUK9K13-60RAXCT-ND
Mosfet Array 2 N-Channel (Dual) 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Dual) 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Buy Now Datasheet
FET, MOSFET Arrays - 1727-BUK9K13-60RAXTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-BUK9K13-60RAXTR-ND
FET, MOSFET Arrays 1727-BUK9K13-60RAXTR-ND
Mosfet Array 2 N-Channel (Dual) 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Dual) 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Buy Now Datasheet
FET, MOSFET Arrays - 1727-BUK9K13-60RAXDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-BUK9K13-60RAXDKR-ND
FET, MOSFET Arrays 1727-BUK9K13-60RAXDKR-ND
Mosfet Array 2 N-Channel (Dual) 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Dual) 60V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Buy Now Datasheet
MOSFETs - 2401817 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2401817
MOSFETs 2401817
Dual N-channel 60 V, 12.5 mOhm MOSFET

Dual N-channel 60 V, 12.5 mOhm MOSFET

Supplier's Site
MOSFETs - 2401817P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2401817P
MOSFETs 2401817P
Dual N-channel 60 V, 12.5 mOhm MOSFET

Dual N-channel 60 V, 12.5 mOhm MOSFET

Supplier's Site
MOSFETs - 2401816 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2401816
MOSFETs 2401816
Dual N-channel 60 V, 12.5 mOhm MOSFET

Dual N-channel 60 V, 12.5 mOhm MOSFET

Supplier's Site
FET, MOSFET Arrays - BUK9K13-60RAX - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
BUK9K13-60RAX
FET, MOSFET Arrays BUK9K13-60RAX
BUK9K13-60RA/SOT1205 /LFPAK56D

BUK9K13-60RA/SOT1205/LFPAK56D

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK9K13-60RAX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK9K13-60RAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK9K13-60RAX
MOSFET 2N-CH 60V 40A LFPAK56D

MOSFET 2N-CH 60V 40A LFPAK56D

Supplier's Site
Dual Mosfet, N-Ch, 60V, 40A, Lfpak56D Rohs Compliant Nexperia - 21AJ6519 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, N-Ch, 60V, 40A, Lfpak56D Rohs Compliant Nexperia
21AJ6519
Dual Mosfet, N-Ch, 60V, 40A, Lfpak56D Rohs Compliant Nexperia 21AJ6519
DUAL MOSFET, N-CH, 60V, 40A, LFPAK56D ROHS COMPLIANT: YES

DUAL MOSFET, N-CH, 60V, 40A, LFPAK56D ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey RS Components, Ltd. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK9K13-60RAX 1378028-BUK9K13-60RAX 289-BUK9K13-60RAX 1727-BUK9K13-60RAXCT-ND 2401817 BUK9K13-60RAX BUK9K13-60RAX 21AJ6519
Product Name Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays 60V 40A MOSFET Transistor FET, MOSFET Arrays MOSFETs FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual Mosfet, N-Ch, 60V, 40A, Lfpak56D Rohs Compliant Nexperia
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 60 volts 60 volts
IDSS 40000 milliamps 40000 milliamps
VGS(off) 10 volts
PD 64 milliwatts 64 milliwatts
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