Nexperia B.V. Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

Page: 1 2 3 4

Product Name	Notes
PSMN014-40YS PSMN014-60LS PSMN014-80YL PSMN015-100B,118 PSMN015-100P,127 PSMN015-110P,127 PSMN015-60PS PSMN015-60PS,127 PSMN016-100PS PSMN016-100PS,127 PSMN017-30BL,118 PSMN017-30EL,127 PSMN017-30PL,127 PSMN017-60YS PSMN017-80PS,127 PSMN018-100PSFQ PSMN022-30BL,118 PSMN022-30PL,127 PSMN025-100D,118 PSMN027-100BS,118 PSMN027-100PS,127 PSMN027-100XS,127 PSMN030-150B,118 PSMN030-150P,127 PSMN030-60YS PSMN034-100PS,127 PSMN035-100LS PSMN035-150B,118 PSMN038-100K,518 PSMN039-100YS PSMN045-80YS PSMN050-80BS,118 PSMN057-200P,127 PSMN063-150D,118 PSMN069-100YS PSMN070-200B,118 PSMN070-200P,127 PSMN075-100MSE PSMN0R9-25YLC PSMN0R9-25YLD PSMN130-200D,118 PSMN165-200K,518 PSMN1R0-30YLD PSMN1R0-40YLD PSMN1R1-30EL,127 PSMN1R1-30PL,127 PSMN1R2-25YLC PSMN1R2-30YLC PSMN1R2-55SLHAX PSMN1R4-40YLD PSMN1R4-40YSHX PSMN1R5-25YL,115 PSMN1R5-30YLC PSMN1R5-40ES,127 PSMN1R5-40PS,127 PSMN1R6-30BL,118 PSMN1R6-30PL,127 PSMN1R6-40YLC,115 PSMN1R6-40YLC:115 PSMN1R6-60CLJ PSMN1R7-30YL PSMN1R8-30BL,118 PSMN1R8-30PL PSMN1R8-30PL,127 PSMN1R9-40PL,127 PSMN1R9-40PLQ PSMN2R0-30BL,118 PSMN2R0-30PL PSMN2R0-30PL,127 PSMN2R0-30YLE/S50X PSMN2R0-60PS,127 PSMN2R0-60PSRQ PSMN2R1-40PLQ PSMN2R1-60CSJ PSMN2R2-40BS,118 PSMN2R2-40PS,127 PSMN2R3-80SSFJ PSMN2R5-60PLQ PSMN2R5-80SSEJ PSMN2R6-100SSFJ PSMN2R6-40YS PSMN2R6-60PSQ PSMN2R7-30PL PSMN2R7-30PL,127 PSMN2R8-40PS,127 PSMN2R8-80SSFJ PSMN2R9-100SSEJ PSMN3R0-60ES,127 PSMN3R0-60PS,127 PSMN3R2-30YLC,115 PSMN3R3-100SSFJ PSMN3R3-40YS PSMN3R3-60PLQ PSMN3R3-80PS,127 PSMN3R4-30PL,127 PSMN3R5-40YSD PSMN3R5-80ES,127 PSMN3R5-80PS PSMN3R5-80PS,127 PSMN3R9-60PSQ PSMN4R1-60YL PSMN4R2-60PLQ PSMN4R3-100ES,127 PSMN4R3-100PS,127 PSMN4R3-30BL PSMN4R3-30PL,127 PSMN4R3-80ES,127 PSMN4R3-80PS,127 PSMN4R4-80PS,127 PSMN4R5-40PS PSMN4R5-40PS,127 PSMN4R6-60BS PSMN4R6-60PS,127 PSMN4R8-100PSEQ PSMN5R0-100ES,127 PSMN5R0-100PS,127 PSMN5R0-30YL PSMN5R0-80BS,118 PSMN5R0-80PS,127 PSMN5R3-25MLD,115 PSMN5R4-25YLD,115 PSMN5R6-100PS,127 PSMN5R6-100YSFQ PSMN5R6-100YSFX PSMN5R8-40YS PSMN6R0-30YLD PSMN6R3-120ESQ PSMN6R3-120PS PSMN6R5-30MLDX PSMN6R5-80PS,127 PSMN6R9-100YSFX PSMN7R0-100ES,127 PSMN7R0-100PS,127 PSMN7R0-30YL PSMN7R0-60YS PSMN7R6-60PS,127 PSMN7R8-100PSEQ PSMN7R8-120ESQ PSMN7R8-120PSQ PSMN8R0-40PS,127 PSMN8R2-80YS PSMN8R5-100ESFQ PSMN8R5-100ESQ PSMN8R5-100PSFQ PSMN8R5-100PSQ PSMN8R7-100YSFX PSMN8R7-80PS PSMN8R7-80PS,127 PSMN9R5-100PS,127 PSMNR51-25YLH PSMNR90-40SSHJ PSMNR90-50SLH PSMNR90-50SLHAX PSMP012-30YEX PSMP015-40YEX PSMP020-30YEX PSMP025-40YEX PSMP032-60YEX PSMP057-60YEX PXN012-60QLJ PXN4R8-30QLJ PXN5R5-30QLJ PXP6R7-30QLJ PXP9R1-30QLJ SI2304DS,215 SMN012-60YS115 SMN014-40YS115 SPP1421DMR2G
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN3R3-40MLHX	118 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN3R3-40MSHX	118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN3R2-40YLDX	120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology -- PSMN3R2-40YLBX	120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6...
N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN3R5-40YSD/2X N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN3R5-40YSDX	120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 3.5 mOhm, 120 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology -- PSMN3R5-40YSBX	120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6...
N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN2R5-40YLD/2X N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN2R5-40YLDX	160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 2.6 mOhm, 160 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology -- PSMN2R5-40YLBX	160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6...
N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN2R8-40YSD/2X N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN2R8-40YSDX	160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology -- PSMN2R8-40YSBX	160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6...
N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN2R0-40YLDX	180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 2.1 mOhm, 180 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology -- PSMN2R0-40YLBX	180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6...
N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN2R2-40YSDX	180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology -- PSMN2R2-40YSBX	180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6...
N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R7-40YLDX	200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology -- PSMN1R7-40YLBX	200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6...
N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R9-40YSDX	200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology -- PSMN1R9-40YSBX	200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6...
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E -- PSMN1R5-50YLHX N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E -- PSMN2R0-55YLHX	200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s...
N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R5-40YSD/2X N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R5-40YSDX	240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology -- PSMN1R4-40YLD/1X N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology -- PSMN1R4-40YLD/2X N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology -- PSMN1R4-40YLDX	240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R2-30YLD/2X N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R2-30YLDX	250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs...
N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R0-40YLD/1X N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R0-40YLD/2X N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology -- PSMN1R0-40YLDX	280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology -- PSMN1R0-40YSHX	290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN0R9-30YLD/2X N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN0R9-30YLDX N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R0-30YLD/1X N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R0-30YLD/2X N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R0-30YLDX	300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs...
N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology -- PSMNR90-40YLHX	300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance...
N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology -- PSMN1R0-40SSHJ	325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually...
N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology -- PSMNR70-40SSHJ	425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually...
N-channel 40 V, 6.7 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN6R7-40MLD/2X N-channel 40 V, 6.7 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN6R7-40MLDX	50 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications operating...
N-channel 40 V, 6.7 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN6R7-40MSDX	50 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology -- PSMNR55-40SSHJ	500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually...
N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN8R5-40MLDX	60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN8R5-40MSDX	60 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN5R0-40MLHX	85 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN5R0-40MSHX	85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 4.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN4R3-40MLHX	95 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology -- PSMN4R3-40MSHX	95 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at...
N-channel 40 V, 0.97 mOhm, ASFET for Battery System in LFPAK56E -- PSMNR90-40YSNX	ASFET for Battery System applications, characterized by low RDSon and strong SOA capability for reduced I2R conduction losses. ASFETs deliver high efficiency, reduced heat generation and superior...
N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology -- PSMN014-40HLDX	Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using NextPowerS3 technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach...
N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN6R1-40HLX N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN8R0-40HLX	Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach...
N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN029-100HLX N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN033-100HLX N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN045-100HLX	Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits High peak drain current IDM Copper clip and flexible Leads High operating...
N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN6R8-40HSX N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN8R5-40HSX N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN014-60HSX N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN9R3-60HSX	Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits Dual MOSFET Repetitive avalanche rated High reliability LFPAK56D package Copper-clip, solder die attach...
N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN025-100HSX N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN028-100HSX N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology -- PSMN038-100HSX	Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits High peak drain current IDM Copper clip and flexible Leads High operating...
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) -- PSMN4R2-40VSHX	Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity Module shrinkage through reduced component count Improved system level Rth(j-amb) due to optimized package design Lower...
N-channel 25 V 0.99 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN0R9-25YLC,115 N-channel 25 V 1.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R1-25YLC,115 N-channel 25 V 1.3 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R2-25YLC,115 N-channel 25 V, 2.4 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R2-25YLC,115 N-channel 25 V, 3.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R9-25YLC,115 N-channel 25 V, 4.5 mOhm logic level MOSFET in LFPAK -- PSMN4R0-25YLC,115 N-channel 25 V, 6.1 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R0-25YLB,115 N-channel 25 V, 6.5 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R5-25YLC,115 N-channel 30 V 1.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R0-30YLC,115 N-channel 30 V 1.25mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R2-30YLC,115 N-channel 30 V 1.55mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R5-30YLC,115 N-channel 30 V 9.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN9R5-30YLC,115 N-channel 30 V, 2.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R2-30YLC,115 N-channel 30 V, 2.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R2-30YLC/GFX N-channel 30 V, 2.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN2R6-30YLC,115 N-channel 30 V, 4.35mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN4R1-30YLC,115 N-channel 30 V, 4.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN4R5-30YLC,115 N-channel 30 V, 6.5 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R0-30YLB,115 N-channel 30 V, 7.1 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN7R0-30YLC,115 N-channel 40 V 1.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R8-40YLC,115	Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits...
N-channel 25 V 2.8 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN2R8-25MLC,115 N-channel 25 V 4.15 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN3R9-25MLC,115 N-channel 25 V 8.65 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN9R0-25MLC,115 N-channel 30 V 18.1 mOhm logic level MOSFET in LFPAK33 using TrenchMOS Technology -- PSMN020-30MLCX N-channel 30 V 2.95 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN2R9-30MLC,115 N-channel 30 V 4.65 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN4R4-30MLC,115 N-channel 30 V 7 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN7R0-30MLC,115 N-channel 30 V 9.8 mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN9R8-30MLC,115	Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits...
N-channel 30 V, 3.15mOhm logic level MOSFET in LFPAK33 using NextPower Technology -- PSMN3R0-30MLC,115	Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment Features and benefits...
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 -- PSMN038-100YLX N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 -- PSMN041-80YLX	Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and...
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN2R4-30MLD/1X N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN2R4-30MLD/2X N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN2R4-30MLD/A00X N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN2R4-30MLDX N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN6R4-30MLDX	Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high efficiency and the low spiking performance usually associated...
N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN2R0-25MLDX N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN3R5-25MLDX N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN5R3-25MLDX N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN4R2-30MLD/2X N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN4R2-30MLDX N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN7R5-30MLDX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an...
N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology -- PSMN6R1-25MLDX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an...
N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology -- PSMN1R5-25MLHX N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology -- PSMN1R8-30MLHX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and...
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology -- PSMN1R6-30MLHX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and...
N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology -- PSMNR70-30YLHX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated...
N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology -- PSMNR60-25YLHX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated...
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN0R9-25YLDX N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R0-25YLD/1X N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R0-25YLDX N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R2-25YLDX N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R7-25YLDX N-channel 25 V, 2.09 mΩ, 179 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN2R0-25YLDX N-channel 25 V, 5.69 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN5R4-25YLDX N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN6R0-25YLDX N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R4-30YLD/1X N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R4-30YLD/2X N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R4-30YLDX N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN2R4-30YLD/2X N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN2R4-30YLDX N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN7R5-30YLDX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an...
N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN0R7-25YLD/1X N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN0R7-25YLD/2X N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN0R7-25YLDX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an...
N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN2R0-30YLD/2X N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN2R0-30YLDX N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN3R0-30YLD/1X N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN3R0-30YLD/2X N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN3R0-30YLDX N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN4R0-30YLDX N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN6R0-30YLD/2X N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN6R0-30YLDX N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN6R1-30YLDX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an...
N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology -- PSMNR51-25YLHX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency and high current. Rated...
N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology -- PSMNR58-30YLHX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated...
N-channel 30 V 2 mOhm logic level MOSFET in LFPAK -- PSMN2R0-30YL,115 N-channel 30 V 2.4 mOhm logic level MOSFET in LFPAK -- PSMN2R5-30YL,115 N-channel 30 V 3 mOhm logic level MOSFET in LFPAK -- PSMN3R0-30YL,115 N-channel 30 V 3.5 mOhm logic level MOSFET in LFPAK -- PSMN3R5-30YL,115 N-channel 30 V 4 mOhm logic level MOSFET in LFPAK -- PSMN4R0-30YL,115 N-channel 30 V 5 mOhm logic level MOSFET in LFPAK -- PSMN5R0-30YL,115 N-channel 30 V 6 mOhm logic level MOSFET in LFPAK -- PSMN6R0-30YL,115 N-channel 30 V 7 mOhm logic level MOSFET in LFPAK -- PSMN7R0-30YL,115 N-channel 9.1 mOhm 30 V TrenchMOS logic level FET in LFPAK -- PSMN9R1-30YL,115	Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. Features and...
N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 -- PSMN015-100YLX N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 -- PSMN019-100YLX N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56 -- PSMN021-100YLX N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56 -- PSMN4R1-60YLX N-channel 60 V, 5.2 mΩ logic level MOSFET in LFPAK56 -- PSMN5R2-60YLX N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 -- PSMN5R6-60YLX N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56 -- PSMN7R5-60YLX N-channel 80 V, 14 mΩ logic level MOSFET in LFPAK56 -- PSMN014-80YLX N-channel 80 V, 25 mOhm logic level MOSFET in LFPAK56 -- PSMN025-80YLX N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56 -- PSMN8R0-80YLX	Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor...
N-channel 30 V 1.0 mOhm logic level MOSFET in D2PAK -- PSMNR90-30BL,118 N-channel 30 V 1.5 mOhm logic level MOSFET in D2PAK -- PSMN1R5-30BLEJ N-channel 30 V 3.0 mOhm logic level MOSFET in D2PAK -- PSMN2R7-30BL,118 N-channel 30 V 4.1 mOhm logic level MOSFET in D2PAK -- PSMN4R3-30BL,118 N-channel 30 V, 3.4 mOhm logic level MOSFET in D2PAK -- PSMN3R4-30BLE,118	Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 25 V 1.2 mOhm logic level MOSFET in LFPAK -- PSMN1R2-25YL,115 N-channel 30 V 1.3 mOhm logic level MOSFET in LFPAK -- PSMN1R3-30YL,115	Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 30 V 1.5 mOhm logic level MOSFET in LFPAK -- PSMN1R5-30YL,115 N-channel 30 V 1.7 mOhm logic level MOSFET in LFPAK -- PSMN1R7-30YL,115 N-channel 30 V 2 mOhm logic level MOSFET in LFPAK -- PSMN2R0-30YLE,115	Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 -- PSMNR89-25YLEX N-channel 25 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 -- PSMNR98-25YLEX N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 -- PSMN1R6-25YLEX N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 -- PSMNR82-30YLEX N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 -- PSMN1R0-30YLEX N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 -- PSMN1R1-30YLEX N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 -- PSMN2R1-30YLEX	N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. Features...
N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E -- PSMNR56-25YLEX N-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E -- PSMNR67-30YLEX	N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56E package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. Features...
30 V, N-channel Trench MOSFET -- PXN018-30QLJ 30 V, N-channel Trench MOSFET -- PXN4R7-30QLJ 30 V, N-channel Trench MOSFET -- PXN5R4-30QLJ 30 V, N-channel Trench MOSFET -- PXN9R0-30QLJ	N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology MLPAK33 package (3.3...
25 V, N-channel Trench MOSFET -- PXN6R2-25QLJ 25 V, N-channel Trench MOSFET -- PXN7R7-25QLJ 30 V, N-channel Trench MOSFET -- PXN010-30QLJ 30 V, N-channel Trench MOSFET -- PXN017-30QLJ 30 V, N-channel Trench MOSFET -- PXN6R7-30QLJ 30 V, N-channel Trench MOSFET -- PXN8R3-30QLJ	N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low Q...
N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package -- PSMN1R0-100ASEJ N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package -- PSMN1R0-100ASEZ	N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R0-100ASE delivers very low R...
N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package -- PSMN1R2-80ASEJ N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package -- PSMN1R2-80ASEZ	N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80ASE delivers very low R...
N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package -- PSMN1R4-100ASEJ N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package -- PSMN1R4-100ASEZ	N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100ASE delivers very low R...
N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package -- PSMNR90-80ASEJ N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package -- PSMNR90-80ASEZ	N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMNR90-80ASE delivers very low R...
N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package -- PSMN1R0-80CSEJ N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package -- PSMN1R0-80CSEZ	N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R0-80CSE delivers very low R...
N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package -- PSMN1R1-100CSEJ N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package -- PSMN1R1-100CSEZ	N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R1-100CSE delivers very low R...
N-channel, 80 V, 1.3 mOhm, MOSFET with enhanced SOA in CCPAK1212i package -- PSMN1R2-80CSEJ N-channel, 80 V, 1.3 mOhm, MOSFET with enhanced SOA in CCPAK1212i package -- PSMN1R2-80CSEZ	N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R2-80CSE delivers very low R...
N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package -- PSMN1R4-100CSEJ N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package -- PSMN1R4-100CSEZ	N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R4-100CSE delivers very low R...
N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E -- PSMN4R2-80YSEX	N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R2-80YSE delivers very low RDSon and a very strong...
N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E -- PSMN4R8-100YSEX	N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R8-100YSE delivers very low RDSon and a very strong...
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88 -- PSMN1R9-80SSEJ	N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R9-80SSE delivers very low R...
N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 -- PSMN2R3-100SSEJ	N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low R...
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications -- PSMN040-100MSEX	New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing...
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications -- PSMN075-100MSEX	New standards and proprietary approaches are enabling the next generation of Power-over-Ethernet (PoE) systems capable of delivering up to 100 W to each powered device (PD). Large screen LCD displays,...
100 V, N-channel Trench MOSFET -- PXN014-100QEJ	NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package. Features and benefits Logic-level compatible Low Qrr for higher efficiency and...
NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package -- PSMN1R0-100ASFJ NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package -- PSMN1R0-100ASFZ NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package -- PSMN1R0-100CSFJ NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package -- PSMN1R0-100CSFZ NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package -- PSMN1R3-100ASFJ NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package -- PSMN1R3-100ASFZ NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package -- PSMN1R4-100CSFJ NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package -- PSMN1R4-100CSFZ	NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. Features and benefits Low Qrr for higher efficiency...
NextPower 100 V, 10.2 mOhm N-channel MOSFET in LFPAK56 package -- PSMN9R8-100YSFX NextPower 100 V, 10.2 mOhm N-channel MOSFET in LFPAK56 package -- PSMN9R8-100YSFZ NextPower 100 V, 15.5 mOhm N-channel MOSFET in LFPAK56 package -- PSMN015-100YSFX NextPower 100 V, 15.5 mOhm N-channel MOSFET in LFPAK56 package -- PSMN015-100YSFZ NextPower 100 V, 2.07 mOhm, 267 Amp, N-channel MOSFET in LFPAK88 package -- PSMN2R0-100SSFJ NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package -- PSMN3R9-100YSFX NextPower 100 V, 5.6 mOhm N-channel MOSFET in LFPAK56 package -- PSMN5R5-100YSFX NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package -- PSMN7R2-100YSFX NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package -- PSMN7R2-100YSFZ	NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower...
NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package -- PSMNR90-80ASFJ NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package -- PSMNR90-80ASFZ NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package -- PSMNR90-80CSFJ NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package -- PSMNR90-80CSFZ NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package -- PSMN1R1-80ASFJ NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package -- PSMN1R1-80ASFZ NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package -- PSMN1R1-80CSFJ NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package -- PSMN1R1-80CSFZ	NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. Features and benefits Low Qrr for higher efficiency...
NextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package -- PSMN1R3-80SSFJ NextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package -- PSMN1R3-80SSFX NextPower 80 V, 1.8 mOhm, 270 Amp, N-channel MOSFET in LFPAK88 package -- PSMN1R8-80SSFJ NextPower 80 V, 2.4 mOhm, 231 A, N-channel MOSFET in LFPAK56E package -- PSMN2R6-80YSFX NextPower 80 V, 3.1 mOhm, 160 A, N-channel MOSFET in LFPAK56 package -- PSMN3R3-80YSFX NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package -- PSMN3R5-80YSFX NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 -- PSMN4R5-80YSFX	NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower...
30 V, P-channel Trench MOSFET -- PXP013-30QLJ	P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Trench MOSFET technology MLPAK33 package...
30 V, P-channel Trench MOSFET -- PXP012-30QLJ 30 V, P-channel Trench MOSFET -- PXP015-30QLJ 30 V, P-channel Trench MOSFET -- PXP6R1-30QLJ	P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology MLPAK33 package (3.3...
12 V, P-channel Trench MOSFET -- PXP3R7-12QUJ 20 V, P-channel Trench MOSFET -- PXP011-20QXJ 20 V, P-channel Trench MOSFET -- PXP018-20QXJ 20 V, P-channel Trench MOSFET -- PXP020-20QXJ 20 V, P-channel Trench MOSFET -- PXP8R3-20QXJ	P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology MLPAK33 package...
60 V, P-channel Trench MOSFET -- PXP062-60QLJ	P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-1) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Thermally efficient package...
100 V, P-channel Trench MOSFET -- PXP1500-100QSJ 100 V, P-channel Trench MOSFET -- PXP400-100QSJ 150 V, P-channel Trench MOSFET -- PXP700-150QSJ	P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology MLPAK33 package (3.3 x 3.3...
60 V, P-channel Trench MOSFET -- PSMP033-60YEX 60 V, P-channel Trench MOSFET -- PSMP061-60YEX	P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits High thermal power dissipation capability Suitable for thermally demanding...
N-channel TrenchMOS SiliconMAX standard level FET -- PSMN057-200B,118 N-channel TrenchMOS SiliconMAX standard level FET -- PSMN059-150Y,115 N-channel TrenchMOS SiliconMAX standard level FET -- PSMN102-200Y,115	SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial...
N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 -- PSMN1R0-40ULDX	SOT1023A with improved creepage and clearance to meet UL2595 requirements. 280 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation...
N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 -- PSMN0R9-30ULD/2X N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 -- PSMN0R9-30ULDX	SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation...
N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK -- PSMN3R7-100BSEJ	Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN3R7-100BSE delivers very low RDSon and...
N-channel 100 V, 4.8 mΩ standard level MOSFET in D2PAK -- PSMN4R8-100BSEJ	Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand...
N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK -- PSMN7R6-100BSEJ	Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-swap" controllers - robust enough to withstand...
N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK -- PSMN3R8-100BS,118 N-channel 60 V 2 mΩ standard level MOSFET in D2PAK -- PSMN1R7-60BS,118 N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK -- PSMN3R0-60BS,118 N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK -- PSMN7R6-60BS,118 N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK -- PSMN4R6-60BS,118	Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
N-channel 100 V 9.6 mOhm standard level MOSFET in D2PAK -- PSMN9R5-100BS,118	Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 100V 16 mOhm standard level MOSFET in D2PAK -- PSMN016-100BS,118	Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK -- PSMN5R6-100BS,118	Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
N-channel 40 V 1.3 mOhm standard level MOSFET in D2PAK -- PSMN1R1-40BS,118	Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
N-channel 40 V 7.6 mOhm standard level MOSFET in D2PAK -- PSMN8R0-40BS,118 N-channel 60 V 14.8 mOhm standard level MOSFET in D2PAK -- PSMN015-60BS,118 N-channel 80 V 17 mOhm standard level MOSFET in D2PAK -- PSMN017-80BS,118 N-channel 80 V 8.7 mOhm standard level MOSFET in D2PAK -- PSMN8R7-80BS,118 N-channel 80V 6.9mOhm standard level MOSFET in D2PAK -- PSMN6R5-80BS,118	Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 100 V 34.5 mOhm standard level MOSFET in D2PAK. -- PSMN034-100BS,118 N-channel 100V 6.8 mOhm standard level MOSFET in D2PAK. -- PSMN7R0-100BS,118 N-channel 80 V, 3 mOhm standard level FET in D2PAK -- PSMN2R8-80BS,118 N-channel 80 V, 3.5 mOhm standard level MOSFET in D2PAK -- PSMN3R3-80BS,118	Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and...
N-channel 100 V 16.3 mOhm standard level MOSFET in LFPAK -- PSMN016-100YS,115 N-channel 100V 20.5mOhm standard level MOSFET in LFPAK -- PSMN020-100YS,115 N-channel LFPAK 100 V 39.5 mOhm standard level MOSFET -- PSMN039-100YS,115 N-channel LFPAK 100 V 72.4 mOhm standard level MOSFET -- PSMN069-100YS,115 N-channel LFPAK 100V 27.5 mOhm standard level MOSFET -- PSMN028-100YS,115 N-channel LFPAK 40 V 2.8 mOhm standard level MOSFET -- PSMN2R6-40YS,115 N-channel LFPAK 40 V 2.8 mOhm standard level MOSFET -- PSMN2R6-40YS/2X N-channel LFPAK 40 V 3.3 mOhm standard level MOSFET -- PSMN3R3-40YS,115 N-channel LFPAK 40 V 3.3 mOhm standard level MOSFET -- PSMN3R3-40YS/2X N-channel LFPAK 40 V 4.2 mOhm standard level MOSFET -- PSMN4R0-40YS,115 N-channel LFPAK 40 V 8.6 mOhm standard level MOSFET -- PSMN8R3-40YS,115 N-channel LFPAK 40 V, 14 mOhm standard level MOSFET -- PSMN014-40YS,115 N-channel LFPAK 40 V, 5.7 mOhm standard level MOSFET -- PSMN5R8-40YS,115 N-channel LFPAK 60 V 15.7 mOhm standard level MOSFET -- PSMN017-60YS,115 N-channel LFPAK 60 V 24.7 mOhm standard level MOSFET -- PSMN030-60YS,115 N-channel LFPAK 60 V, 5.2 mΩ standard level FET -- PSMN5R5-60YS,115 N-channel LFPAK 60 V, 6.4 mOhm standard level MOSFET -- PSMN7R0-60YS,115 N-channel LFPAK 60 V, 8 mΩ standard level MOSFET -- PSMN8R5-60YS,115 N-channel LFPAK 80 V 12.9 mOhm standard level MOSFET -- PSMN013-80YS,115 N-channel LFPAK 80 V 18 mOhm standard level MOSFET -- PSMN018-80YS,115 N-channel LFPAK 80 V 27.5 mOhm standard level MOSFET -- PSMN026-80YS,115 N-channel LFPAK 80 V 45 mOhm standard level MOSFET -- PSMN045-80YS,115 N-channel LFPAK 80 V 8.5 mOhm standard level MOSFET -- PSMN8R2-80YS,115	Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel LFPAK 60 V, 4.0 mΩ standard level FET -- PSMN4R0-60YS,115	Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of telecom, industrial and domestic equipment. Features...
N-channel 40 V 4.5 mOhm standard level MOSFET in D2PAK -- PSMN4R5-40BS,118 N-channel 80 V, 4.5 mOhm standard level MOSFET in D2PAK -- PSMN4R4-80BS,118	Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...
N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK -- PSMN8R9-100BSEJ	SuperSOA N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. PSMN8R9-100BSE delivers low RDSon and very strong linear-mode (SOA) performance, and complements the latest "hot-swap" controllers...

<< Prev

Other Datasheet Catalogs for Nexperia B.V.