N-channel 60 V, 19 mΩ logic level MOSFET in an LFPAK33 (SOT1210) package, rated for 175 °C junction temperature and qualified to AEC-Q101 standard for automotive applications. The device features repetitive avalanche ruggedness with a non-repetitive avalanche energy rating of 30 mJ, a drain-source on-state resistance of 16 to 19 mΩ at 25 °C and 5 V gate drive, and a peak drain current of 152 A. The gate-source threshold voltage ranges from 0.5 V at 175 °C to 2.1 V at 25 °C. The package supports a maximum power dissipation of 62 W and has a thermal resistance from junction to mounting base of 2.01 to 2.43 K/W.
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
BUK9M19-60E - N-channel 60 V, 19 mΩ logic level MOSFET in LFPAK33 Product overview: BUK9M19-60EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9M19-60EX can be used for catalog matching and distributor lookup.
Win Source Part Number: 1381641-BUK9M19-60EX
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Standard Package: 1,500 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 62W (Tc)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1814 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Base Product Number: BUK9M19
Drive Voltage (Max Rds On, Min Rds On): 5V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
N-Channel 60V 38A (Tc) 62W (Tc) Surface Mount LFPAK33
N-Channel 60V 38A (Tc) 62W (Tc) Surface Mount LFPAK33
N-Channel 60V 38A (Tc) 62W (Tc) Surface Mount LFPAK33
MOSFET, N-CH, AUTO, 38A, 60V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET, AEC-Q101, N-CH, 60V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 38A LFPAK33
MOSFET N-CH 60V 38A LFPAK33
MOSFET BUK9M19-60E/MLFPAK/R
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9M19-60EX | 278-BUK9M19-60EX | 1381641-BUK9M19-60EX | 1727-2574-6-ND | 17AC9458 | BUK9M19-60EX | BUK9M19-60EX | BUK9M19-60EX |
| Product Name | N-channel 60 V, 19 mΩ logic level MOSFET in LFPAK33 | N-Channel 60 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, Auto, 38A, 60V, Sot1210; Transistor Polarity Nexperia | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 38000 milliamps | 38000 milliamps | 38000 milliamps | |||||
| VGS(off) | 10 volts | |||||||
| PD | 62 milliwatts | 62000 milliwatts | 62000 milliwatts |
