N-channel 80 V logic level MOSFET in an LFPAK33 (SOT1210) package using TrenchMOS technology, designed for automotive applications and qualified to AEC-Q101 at 175 °C. The device has a maximum continuous drain current of 55 A at 25 °C mounting base temperature, a drain-source on-state resistance of 6.8 to 12.5 mΩ at 10 V gate-source voltage and 25 °C, and a total power dissipation of 91 W. It features side-wettable flanks for reliable solder joint inspection and soft body-diode recovery. The package measures 3.40 mm x 3.40 mm with a 0.65 mm pitch.
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
BUK9M13-80L/SOT1210/
BUK9M13-80L/SOT1210/
BUK9M13-80L/SOT1210/
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | BUK9M13-80LX | 1727-BUK9M13-80LXCT-ND |
| Product Name | N-channel 80 V, 13 mOhm logic level MOSFET in LFPAK33 | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 80 volts | |
| IDSS | 55000 milliamps | |
| VGS(off) | 20 volts | |
| PD | 91 milliwatts |
