N-channel 40 V, 20.0 mΩ logic level MOSFET in an LFPAK33 (SOT1210) package, qualified to AEC-Q101 at 175 °C for automotive applications. The device features Trench 9 superjunction technology, a copper clip package for high reliability, and repetitive avalanche capability. It has a maximum drain-source voltage of 40 V, continuous drain current of 25 A at 25 °C, and maximum power dissipation of 38 W. Thermal resistance from junction to mounting base is 3.76 to 3.96 K/W. Gate-source threshold voltage ranges from 0.7 V to 2.6 V across temperature. The package has 8 leads with a 0.65 mm pitch and Gull wing leads for high manufacturability and AOI.
Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
Features and benefits
Applications
N-Channel 40V 25A (Ta) 38W (Ta) Surface Mount LFPAK33
N-Channel 40V 25A (Ta) 38W (Ta) Surface Mount LFPAK33
N-Channel 40V 25A (Ta) 38W (Ta) Surface Mount LFPAK33
MOSFET N-CH 40V 25A LFPAK33
MOSFET N-CH 40V 25A LFPAK33
MOSFET N-channel 40 V, 20.0 m? logic level MOSFET in LFPAK33
MOSFET, N-CH, 40V, 25A, 175DEG C, 38W; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0158ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.85V; Power RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9M20-40HX | 1727-8679-1-ND | BUK9M20-40HX | BUK9M20-40HX | BUK9M20-40HX | 99AC8926 |
| Product Name | N-channel 40 V, 20.0 mOhm logic level MOSFET in LFPAK33 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 40V, 25A, 175Deg C, 38W; Transistor Polarity Nexperia |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 40 volts | 40 volts | ||||
| IDSS | 25000 milliamps | 25000 milliamps | 25000 milliamps | |||
| VGS(off) | 20 volts | |||||
| PD | 38 milliwatts | 38000 milliwatts |
