Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
N-Channel 30V 54A (Tc) 55W (Tc) Surface Mount LFPAK33
N-Channel 30V 54A (Tc) 55W (Tc) Surface Mount LFPAK33
N-Channel 30V 54A (Tc) 55W (Tc) Surface Mount LFPAK33
BUK9M10-30E - N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 Product overview: BUK9M10-30EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9M10-30EX can be used for catalog matching and distributor lookup.
Win Source Part Number: 1356087-BUK9M10-30EX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 31 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Base Product Number: BUK9M10
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1249 pF @ 25 V
Power Dissipation (Max): 55W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
MOSFET, N-CH, AUTO, 54A, 30V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET, AEC-Q101, N-CH, 30V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 54A LFPAK33
MOSFET BUK9M10-30E/MLFPAK/R
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9M10-30EX | 1727-2567-2-ND | 278-BUK9M10-30EX | 1356087-BUK9M10-30EX | 17AC9450 | BUK9M10-30EX | BUK9M10-30EX |
| Product Name | N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 | Single FETs, MOSFETs | N-Channel 30 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Mosfet, N-Ch, Auto, 54A, 30V, Sot1210; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | ||||||
| Package Type | SOT1210 | SOT-1210, 8-LFPAK33 (5-Lead) | SOT3 | TO-3 | 1249 pF @ 25 V | ||
| Polarity | N-Channel | N-Channel | |||||
| Transistor Grade / Operating Range | Automotive | ||||||
| PD | 55000 milliwatts |