Nexperia B.V. N-channel TrenchMOS logic level FET BUK963R3-60E,118

Description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and benefits AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
  • N-channel TrenchMOS logic level FET - BUK963R3-60E,118 - Nexperia B.V.
    Nexperia B.V.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK963R3-60E,118 - 1025392-BUK963R3-60E,118 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 1727-1099-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-1099-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-1099-6-ND - DigiKey
    DigiKey
  • MOSFET N-CH 60V 120A D2PAK - 554-BUK963R3-60E,118 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK963R3-60E,118 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and benefits AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel TrenchMOS logic level FET - BUK963R3-60E,118 - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel TrenchMOS logic level FET
BUK963R3-60E,118
N-channel TrenchMOS logic level FET BUK963R3-60E,118
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and benefits AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.

Features and benefits

  • AEC-Q101 compliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating
  • True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK963R3-60E,118 - 1025392-BUK963R3-60E,118 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK963R3-60E,118
1025392-BUK963R3-60E,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK963R3-60E,118 1025392-BUK963R3-60E,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1025392-BUK963R3-60E ,118 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 293W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 2.1V @ 1mA Max Gate Charge: 95nC @ 5V Max Input Capacitance: 13490pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 3 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025392-BUK963R3-60E,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 293W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 1mA
Max Gate Charge: 95nC @ 5V
Max Input Capacitance: 13490pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 3 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1099-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1099-2-ND
Single FETs, MOSFETs 1727-1099-2-ND
N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1099-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1099-1-ND
Single FETs, MOSFETs 1727-1099-1-ND
N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1099-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1099-6-ND
Single FETs, MOSFETs 1727-1099-6-ND
N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

Buy Now Datasheet
MOSFET N-CH 60V 120A D2PAK - 554-BUK963R3-60E,118 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 120A D2PAK
554-BUK963R3-60E,118
MOSFET N-CH 60V 120A D2PAK 554-BUK963R3-60E,118
MOSFET N-CH 60V 120A D2PAK

MOSFET N-CH 60V 120A D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK963R3-60E,118 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK963R3-60E,118
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK963R3-60E,118
MOSFET N-CH 60V 120A D2PAK

MOSFET N-CH 60V 120A D2PAK

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BUK963R3-60E,118 1025392-BUK963R3-60E,118 1727-1099-2-ND 554-BUK963R3-60E,118 BUK963R3-60E,118
Product Name N-channel TrenchMOS logic level FET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK963R3-60E,118 Single FETs, MOSFETs MOSFET N-CH 60V 120A D2PAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT404 TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive Automotive
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 293000 milliwatts 293000 milliwatts
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