Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
60V 120A N-CH Power MOSFET D2PAK Surface Mount Product overview: BUK963R3-60E,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 60V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK963R3-60E,118
N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK
N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK
N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025392-BUK963R3-60E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 293W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 1mA
Max Gate Charge: 95nC @ 5V
Max Input Capacitance: 13490pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 3 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 120A D2PAK
MOSFET N-CH 60V 120A D2PAK
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK963R3-60E,118 | 278-BUK963R3-60E,118 | 1727-1099-2-ND | 1025392-BUK963R3-60E,118 | 554-BUK963R3-60E,118 | BUK963R3-60E,118 |
| Product Name | N-channel TrenchMOS logic level FET | SMD 60V 120A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK963R3-60E,118 | MOSFET N-CH 60V 120A D2PAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT404 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| Transistor Grade / Operating Range | Automotive | Automotive | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||
| PD | 293000 milliwatts | 293000 milliwatts | 293000 milliwatts |
