Nexperia B.V. N-channel TrenchMOS logic level FET BUK963R3-60E,118

Description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and benefits AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
Request a Quote Datasheet
Description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and benefits AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel TrenchMOS logic level FET - BUK963R3-60E,118 - Nexperia B.V.
Nijmegen, Netherlands
N-channel TrenchMOS logic level FET
BUK963R3-60E,118
N-channel TrenchMOS logic level FET BUK963R3-60E,118
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and benefits AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.

Features and benefits

  • AEC-Q101 compliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating
  • True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK963R3-60E,118 - 1025392-BUK963R3-60E,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK963R3-60E,118
1025392-BUK963R3-60E,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK963R3-60E,118 1025392-BUK963R3-60E,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1025392-BUK963R3-60E ,118 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 293W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 2.1V @ 1mA Max Gate Charge: 95nC @ 5V Max Input Capacitance: 13490pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 3 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025392-BUK963R3-60E,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 293W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 1mA
Max Gate Charge: 95nC @ 5V
Max Input Capacitance: 13490pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 3 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1099-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1099-2-ND
Single FETs, MOSFETs 1727-1099-2-ND
N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1099-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1099-1-ND
Single FETs, MOSFETs 1727-1099-1-ND
N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-1099-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1099-6-ND
Single FETs, MOSFETs 1727-1099-6-ND
N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Singapore
SMD 60V 120A MOSFET Transistor
278-BUK963R3-60E,118
SMD 60V 120A MOSFET Transistor 278-BUK963R3-60E,118
60V 120A N-CH Power MOSFET D2PAK Surface Mount Product overview: BUK963R3-60E,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 60V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK963R3-60E,118 can be used for catalog matching and distributor lookup.

60V 120A N-CH Power MOSFET D2PAK Surface Mount Product overview: BUK963R3-60E,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 60V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK963R3-60E,118 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK963R3-60E,118 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK963R3-60E,118
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK963R3-60E,118
MOSFET N-CH 60V 120A D2PAK

MOSFET N-CH 60V 120A D2PAK

Supplier's Site
MOSFET N-CH 60V 120A D2PAK - 554-BUK963R3-60E,118 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 120A D2PAK
554-BUK963R3-60E,118
MOSFET N-CH 60V 120A D2PAK 554-BUK963R3-60E,118
MOSFET N-CH 60V 120A D2PAK

MOSFET N-CH 60V 120A D2PAK

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK963R3-60E,118 1025392-BUK963R3-60E,118 1727-1099-2-ND 278-BUK963R3-60E,118 BUK963R3-60E,118 554-BUK963R3-60E,118
Product Name N-channel TrenchMOS logic level FET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK963R3-60E,118 Single FETs, MOSFETs SMD 60V 120A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 60V 120A D2PAK
Package Type SOT404 TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive Automotive
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 293000 milliwatts 293000 milliwatts 293000 milliwatts
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