Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
BUK9M35-80E - N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33 Product overview: BUK9M35-80EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9M35-80EX can be used for catalog matching and distributor lookup.
Win Source Part Number: 1004628-BUK9M35-80EX
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 62W (Tc)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: BUK9M35-80E,115,BUK9
Base Product Number: BUK9M35
Drive Voltage (Max Rds On, Min Rds On): 5V
N-Channel 80V 26A (Tc) 62W (Tc) Surface Mount LFPAK33
N-Channel 80V 26A (Tc) 62W (Tc) Surface Mount LFPAK33
N-Channel 80V 26A (Tc) 62W (Tc) Surface Mount LFPAK33
MOSFET N-CH 80V 26A LFPAK33
MOSFET N-CH 80V 26A LFPAK33
MOSFET, AEC-Q101, N-CH, 80V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET, AEC-Q101, N-CH, 80V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET BUK9M35-80E/MLFPAK/R
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK9M35-80EX | 278-BUK9M35-80EX | 1004628-BUK9M35-80EX | 1727-2580-6-ND | BUK9M35-80EX | BUK9M35-80EX | 17AC9464 | BUK9M35-80EX |
| Product Name | N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33 | N-Channel 80 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 80V, Sot-1210; Transistor Polarity Nexperia | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 80 volts | 80 volts | ||||||
| IDSS | 26000 milliamps | 26000 milliamps | 26000 milliamps | |||||
| VGS(off) | 10 volts | |||||||
| PD | 62 milliwatts | 62000 milliwatts | 62000 milliwatts |
