The NSF040120L4A0 is a 1200 V, 40 mΩ N-channel silicon carbide MOSFET in a TO-247-4L package with a Kelvin source pin for improved switching performance. It supports continuous drain currents up to 65 A at 25 °C and 46 A at 100 °C, with a peak pulsed drain current of 160 A. The device has a junction-to-case thermal resistance of 0.41 to 0.49 K/W, a maximum junction temperature of 175 °C, and exhibits low switching losses with a typical gate charge of 95 nC. The TO-247-4L package is a plastic single-ended through-hole design with a mounting hole for heatsink attachment. It is qualified under the IEC 60134 Absolute Maximum Rating System and is intended for use in industrial applications such as electric vehicle charging, photovoltaic inverters, and motor drives.
The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
Features and benefits
Applications
SICFET N-CH 1200V 65A TO247-4
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | NSF040120L4A0Q | 1727-NSF040120L4A0Q-ND |
| Product Name | 1200 V, 40 mΩ, N-channel SiC MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 1200 volts | |
| IDSS | 65000 milliamps | |
| VGS(off) | 22 volts | |
| PD | 306 milliwatts |
