Nexperia B.V. N-channel TrenchMOS logic level FET BUK9675-55A,118

Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits AEC-Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids
Request a Quote Datasheet
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits AEC-Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel TrenchMOS logic level FET - BUK9675-55A,118 - Nexperia B.V.
Nijmegen, Netherlands
N-channel TrenchMOS logic level FET
BUK9675-55A,118
N-channel TrenchMOS logic level FET BUK9675-55A,118
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits AEC-Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits

  • AEC-Q101 compliant
  • Low conduction losses due to low on-state resistance
  • Suitable for logic level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V and 24 V loads
  • Automotive and general purpose power switching
  • Motors, lamps and solenoids
Supplier's Site Datasheet
Singapore
N-Channel MOSFET Transistor
278-BUK9675-55A,118
N-Channel MOSFET Transistor 278-BUK9675-55A,118
N-channel TrenchMOS logic level FET D2PAK 3-Pin Product overview: BUK9675-55A,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9675-55A,118 can be used for catalog matching and distributor lookup.

N-channel TrenchMOS logic level FET D2PAK 3-Pin Product overview: BUK9675-55A,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9675-55A,118 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - BUK9675-55A,118 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 20A I(D), 55V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 20A I(D), 55V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9675-55A,118 - 1025401-BUK9675-55A,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9675-55A,118
1025401-BUK9675-55A,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9675-55A,118 1025401-BUK9675-55A,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1025401-BUK9675-55A, 118 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 643pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 68 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025401-BUK9675-55A,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 62W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 643pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 68 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7200-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7200-2-ND
Single FETs, MOSFETs 1727-7200-2-ND
N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7200-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7200-6-ND
Single FETs, MOSFETs 1727-7200-6-ND
N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7200-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7200-1-ND
Single FETs, MOSFETs 1727-7200-1-ND
N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Mosfet, Aec-Q101, N-Ch, 55V, 20A, To-263 Rohs Compliant Nexperia - 73AH9830 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 55V, 20A, To-263 Rohs Compliant Nexperia
73AH9830
Mosfet, Aec-Q101, N-Ch, 55V, 20A, To-263 Rohs Compliant Nexperia 73AH9830
MOSFET, AEC-Q101, N-CH, 55V, 20A, TO-263 ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 55V, 20A, TO-263 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK9675-55A,118 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK9675-55A,118
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK9675-55A,118
MOSFET N-CH 55V 20A D2PAK

MOSFET N-CH 55V 20A D2PAK

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. Rochester Electronics Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BUK9675-55A,118 278-BUK9675-55A,118 BUK9675-55A,118 1025401-BUK9675-55A,118 1727-7200-2-ND 73AH9830 BUK9675-55A,118
Product Name N-channel TrenchMOS logic level FET N-Channel MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9675-55A,118 Single FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 55V, 20A, To-263 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT404 SOT404 TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263; TO-252 (DPAK) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive Automotive
Polarity N-Channel N-Channel; N-Channel N-Channel
rDS(on) 0.0810 ohms
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