Nexperia B.V. N-channel TrenchMOS logic level FET BUK9675-55A,118

Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits AEC-Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids
Request a Quote Datasheet
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits AEC-Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
N-channel TrenchMOS logic level FET - BUK9675-55A,118 - Nexperia B.V.
Nijmegen, Netherlands
N-channel TrenchMOS logic level FET
BUK9675-55A,118
N-channel TrenchMOS logic level FET BUK9675-55A,118
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. Features and benefits AEC-Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits

  • AEC-Q101 compliant
  • Low conduction losses due to low on-state resistance
  • Suitable for logic level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V and 24 V loads
  • Automotive and general purpose power switching
  • Motors, lamps and solenoids
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9675-55A,118 - 1025401-BUK9675-55A,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9675-55A,118
1025401-BUK9675-55A,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9675-55A,118 1025401-BUK9675-55A,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1025401-BUK9675-55A, 118 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 62W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 643pF @ 25V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 68 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1025401-BUK9675-55A,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 62W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 643pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 68 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
N-Channel MOSFET Transistor
278-BUK9675-55A,118
N-Channel MOSFET Transistor 278-BUK9675-55A,118
N-channel TrenchMOS logic level FET D2PAK 3-Pin Product overview: BUK9675-55A,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9675-55A,118 can be used for catalog matching and distributor lookup.

N-channel TrenchMOS logic level FET D2PAK 3-Pin Product overview: BUK9675-55A,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9675-55A,118 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - BUK9675-55A,118 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 20A I(D), 55V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 20A I(D), 55V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-7200-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7200-2-ND
Single FETs, MOSFETs 1727-7200-2-ND
N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7200-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7200-6-ND
Single FETs, MOSFETs 1727-7200-6-ND
N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7200-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7200-1-ND
Single FETs, MOSFETs 1727-7200-1-ND
N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

N-Channel 55V 20A (Tc) 62W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK9675-55A,118 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK9675-55A,118
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK9675-55A,118
MOSFET N-CH 55V 20A D2PAK

MOSFET N-CH 55V 20A D2PAK

Supplier's Site
Mosfet, Aec-Q101, N-Ch, 55V, 20A, To-263 Rohs Compliant Nexperia - 73AH9830 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 55V, 20A, To-263 Rohs Compliant Nexperia
73AH9830
Mosfet, Aec-Q101, N-Ch, 55V, 20A, To-263 Rohs Compliant Nexperia 73AH9830
MOSFET, AEC-Q101, N-CH, 55V, 20A, TO-263 ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 55V, 20A, TO-263 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics ERSAELECTRONICS PTE. LTD. Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK9675-55A,118 1025401-BUK9675-55A,118 278-BUK9675-55A,118 BUK9675-55A,118 1727-7200-2-ND BUK9675-55A,118 73AH9830
Product Name N-channel TrenchMOS logic level FET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9675-55A,118 N-Channel MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 55V, 20A, To-263 Rohs Compliant Nexperia
Package Type SOT404 TO-263; SOT3; D2PAK SOT404 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263; TO-252 (DPAK)
Transistor Grade / Operating Range Automotive Automotive
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 55 volts
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