Dual N-channel 80 V, 20 mΩ logic level MOSFET in an LFPAK56D (SOT1205) package, rated for 175 °C junction temperature and compliant with AEC-Q101. Features repetitive avalanche ruggedness, true logic level gate operation with VGS(th) > 0.5 V at 175 °C, and a maximum drain-source on-state resistance of 19.4 mΩ at 25 °C and 10 A. Capable of 23 A continuous drain current at 25 °C and 68 W total power dissipation. Suitable for automotive 12 V, 24 V, and 48 V systems including motor, lamp, and solenoid control.
Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
BUK9K20-80E - Dual N-channel 80 V, 20 mΩ logic level MOSFET Product overview: BUK9K20-80EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 80 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 80 V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BUK9K20-80EX can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1324093-BUK9K20-80EX
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,500
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power - Max: 68W
Supplier Device Package: LFPAK56D
Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3462pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: SOT-1205, 8-LFPAK56
ECCN: EAR99
Fake Threat In the Open Market: 68
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: BUK9K20-80EX-ND,9346
Base Product Number: BUK9K20
RoHS Status: ROHS3 Compliant
Power Field-Effect Transistor
Mosfet Array 2 N-Channel (Dual) 80V 23A (Ta) 68W Surface Mount LFPAK56D
Mosfet Array 2 N-Channel (Dual) 80V 23A (Ta) 68W Surface Mount LFPAK56D
Mosfet Array 2 N-Channel (Dual) 80V 23A (Ta) 68W Surface Mount LFPAK56D
MOSFET, AEC-Q101, DUAL N-CH, 80V, SOT1205 ROHS COMPLIANT: YES
MOSFET 2 N-CH 80V 23A LFPAK56D
MOSFET 2N-CH 80V 23A LFPAK56D
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK9K20-80EX | 289-BUK9K20-80EX | 1324093-BUK9K20-80EX | BUK9K20-80EX | 1727-7405-6-ND | 46AC0532 | BUK9K20-80EX | BUK9K20-80EX |
| Product Name | Dual N-channel 80 V, 20 mΩ logic level MOSFET | N-Channel Dual 80 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | Mosfet, Aec-Q101, Dual N-Ch, 80V, Sot1205 Rohs Compliant Nexperia | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 80 volts | 80 volts | ||||||
| IDSS | 23000 milliamps | 23000 milliamps | ||||||
| VGS(off) | 10 volts | |||||||
| PD | 68 milliwatts |
