The NSF060120L3A0 is a 1200 V N-channel Silicon Carbide MOSFET in a TO-247-3L plastic package for through-hole mounting, with a drain-source on-state resistance of 60 mΩ at 25 °C, a continuous drain current of 37 A at 25 °C and 26 A at 100 °C, and a peak drain current of 80 A. It operates with a gate-source voltage range of -10 V to 22 V, has a junction temperature range of -55 °C to 175 °C, and a thermal resistance from junction to case of 0.68 to 0.82 K/W. The device is suited for high-power industrial applications including electric vehicle charging, photovoltaic inverters, and motor drives.
The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
Features and benefits
Applications
SICFET N-CH 1200V 37A TO247-3
| Nexperia B.V. | DigiKey | RS Components, Ltd. | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NSF060120L3A0Q | 1727-NSF060120L3A0Q-ND | 219463 |
| Product Name | 1200 V, 60 mΩ, N-channel SiC MOSFET | Single FETs, MOSFETs | MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | |
| V(BR)DSS | 1200 volts | ||
| IDSS | 37000 milliamps | ||
| VGS(off) | 22 volts | ||
| PD | 183 milliwatts |
