Nexperia B.V. 1200 V, 60 mΩ, N-channel SiC MOSFET NSF060120L3A0Q

Description
The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives
Request a Quote Datasheet
Description
The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1200 V, 60 mΩ, N-channel SiC MOSFET - NSF060120L3A0Q - Nexperia B.V.
Nijmegen, Netherlands
1200 V, 60 mΩ, N-channel SiC MOSFET
NSF060120L3A0Q
1200 V, 60 mΩ, N-channel SiC MOSFET NSF060120L3A0Q
The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives. Features and benefits Excellent RDSon temperature stability Very low switching losses Fast reverse recovery Fast switching speed Temperature independent turn-off switching losses Very fast and robust intrinsic body diode Applications E-vehicle charging infrastructure Photovoltaic inverters Switch mode power supply Uninterruptable power supply Motor drives

The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.

Features and benefits

  • Excellent RDSon temperature stability
  • Very low switching losses
  • Fast reverse recovery
  • Fast switching speed
  • Temperature independent turn-off switching losses
  • Very fast and robust intrinsic body diode

Applications

  • E-vehicle charging infrastructure
  • Photovoltaic inverters
  • Switch mode power supply
  • Uninterruptable power supply
  • Motor drives
Supplier's Site Datasheet
MOSFETs - 219463 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219463
MOSFETs 219463
N-Channel MOSFET, 60V, 3A, SOT-23

N-Channel MOSFET, 60V, 3A, SOT-23

Supplier's Site
Single FETs, MOSFETs - 1727-NSF060120L3A0Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-NSF060120L3A0Q-ND
Single FETs, MOSFETs 1727-NSF060120L3A0Q-ND
SICFET N-CH 1200V 37A TO247-3

SICFET N-CH 1200V 37A TO247-3

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. RS Components, Ltd. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number NSF060120L3A0Q 219463 1727-NSF060120L3A0Q-ND
Product Name 1200 V, 60 mΩ, N-channel SiC MOSFET MOSFETs Single FETs, MOSFETs
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 1200 volts
IDSS 37000 milliamps
VGS(off) 22 volts
PD 183 milliwatts
Unlock Full Specs
to access all available technical data