PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.
NPN complement: PBDTC123JT
Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current gain (hFE)
High energy efficiency due to less heat generation
Improved device reliability due to reduced heat generation
Built-in bias resistors
Reduces component count
Reduces pick and place costs
Simplifies circuit design
Applications
Digital applications in industrial segments
Battery-driven low power devices
Load-switches
Low current drivers
Power management and charging circuits
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.
NPN complement: PBDTC123JT
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current gain (hFE)
- High energy efficiency due to less heat generation
- Improved device reliability due to reduced heat generation
- Built-in bias resistors
- Reduces component count
- Reduces pick and place costs
- Simplifies circuit design
Applications
- Digital applications in industrial segments
- Battery-driven low power devices
- Load-switches
- Low current drivers
- Power management and charging circuits
