PNP high power bipolar transistor in a power SOT1289B (CFP15B) surface-mount package measuring 5.8 x 4.3 x 0.95 mm, rated for a collector-emitter voltage of -100 V and a continuous collector current of -3 A. It has a peak collector current of -5 A for pulses up to 1 ms, a total power dissipation of up to 2.2 W with adequate PCB mounting, and a junction temperature rating up to 175 °C. The device features a low collector-emitter saturation voltage of -1.2 V at -3 A collector current and is qualified to AEC-Q101 for automotive applications.
PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: MJPE31C-Q
Features and benefits
Applications
MJPE32C-Q/SOT1289B/C
MJPE32C-Q/SOT1289B/C
MJPE32C-Q/SOT1289B/C
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Power Bipolar Transistors | Transistors |
| Product Number | MJPE32C-QZ | 1727-MJPE32C-QZTR-ND |
| Product Name | 100 V, 3 A PNP high power bipolar transistor | Single Bipolar Transistors |
| VCEO | -100 volts | |
| IC(max) | -3 milliamps | |
| PD | 1.6 milliwatts | |
| TJ | 175 C (347 F) |
