N-channel TrenchMOS logic level FET for automotive and general power switching applications, mounted in an LFPAK (SOT669) surface-mount package measuring 5.0 mm × 6.2 mm × 1.20 mm. Rated for 100 V drain-source voltage, 23 A continuous drain current, and 75 W total power dissipation, with a maximum junction temperature of 175°C. Features a typical on-state resistance of 45 mΩ at 25°C and 5 V gate-source voltage, and is qualified to AEC-Q101 standard. Includes non-repetitive avalanche energy rating of 85 mJ at 23 A drain current.
N-channel TrenchMOS logic level FET
| Rochester Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | BUK9Y53-100B/C2,11 |
| Polarity | N-Channel |
