Nexperia B.V. 650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package GANE350-650FBAZ

Description
The GANE350-650FBA is a general purpose 650 V, 350 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching capability No body diode Low gate charge, low output charge Qualified for standard applications ESD protection RoHS, Pb-free, REACH-compliant High efficiency and high power density Applications High power density and high efficiency power conversion AC-to-DC converters, totem pole PFC DC-to-DC converters Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers Datacom and telecom (AC-to-DC and DC-to-DC) converters Motor drives Solar (PV) inverters Class D audio amplifiers, TV PSU and LED drivers
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Description
The GANE350-650FBA is a general purpose 650 V, 350 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching capability No body diode Low gate charge, low output charge Qualified for standard applications ESD protection RoHS, Pb-free, REACH-compliant High efficiency and high power density Applications High power density and high efficiency power conversion AC-to-DC converters, totem pole PFC DC-to-DC converters Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers Datacom and telecom (AC-to-DC and DC-to-DC) converters Motor drives Solar (PV) inverters Class D audio amplifiers, TV PSU and LED drivers
Request a Quote Datasheet

Suppliers

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650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package - GANE350-650FBAZ - Nexperia B.V.
Nijmegen, Netherlands
650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
GANE350-650FBAZ
650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package GANE350-650FBAZ
The GANE350-650FBA is a general purpose 650 V, 350 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching capability No body diode Low gate charge, low output charge Qualified for standard applications ESD protection RoHS, Pb-free, REACH-compliant High efficiency and high power density Applications High power density and high efficiency power conversion AC-to-DC converters, totem pole PFC DC-to-DC converters Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers Datacom and telecom (AC-to-DC and DC-to-DC) converters Motor drives Solar (PV) inverters Class D audio amplifiers, TV PSU and LED drivers

The GANE350-650FBA is a general purpose 650 V, 350 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance.

Features and benefits

  • Enhancement mode - normally-off power switch
  • Ultra high frequency switching capability
  • No body diode
  • Low gate charge, low output charge
  • Qualified for standard applications
  • ESD protection
  • RoHS, Pb-free, REACH-compliant
  • High efficiency and high power density

Applications

  • High power density and high efficiency power conversion
  • AC-to-DC converters, totem pole PFC
  • DC-to-DC converters
  • Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
  • Datacom and telecom (AC-to-DC and DC-to-DC) converters
  • Motor drives
  • Solar (PV) inverters
  • Class D audio amplifiers, TV PSU and LED drivers
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Transistors
Product Number GANE350-650FBAZ
Product Name 650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
Package Type SOT8075-1 SOT8075-1
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