The GANE350-650FBA is a 650 V, 350 mΩ enhancement mode Gallium Nitride (GaN) FET in a DFN5060-5 surface mount package measuring 5 mm × 6 mm × 0.9 mm. It operates with a junction temperature range of -55 °C to 150 °C, has a maximum drain-source voltage of 650 V, and a peak pulsed drain current of 10 A at 25 °C. The device features no body diode, low gate and output charge, ESD protection, and complies with RoHS and REACH standards. Thermal resistance from junction to mounting base is 1.9 K/W. Applications include high-efficiency AC-to-DC and DC-to-DC converters, fast chargers, motor drives, and solar inverters.
The GANE350-650FBA is a general purpose 650 V, 350 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior performance.
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Transistors |
| Product Number | GANE350-650FBAZ |
| Product Name | 650 V, 350 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package |
| Package Type | SOT8075-1 SOT8075-1 |
