Nexperia B.V. 50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ PBDTA114YTH-QR

Description
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC114YTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation High temperature applications up to 175 °C Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital applications in automotive and industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits
  • 50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ - PBDTA114YTH-QR - Nexperia B.V.
    Nexperia B.V.
  • Single, Pre-Biased Bipolar Transistors - 1727-PBDTA114YTH-QRDKR-ND - DigiKey
    DigiKey
  • Single, Pre-Biased Bipolar Transistors - 1727-PBDTA114YTH-QRCT-ND - DigiKey
    DigiKey
  • Single, Pre-Biased Bipolar Transistors - 1727-PBDTA114YTH-QRTR-ND - DigiKey
    DigiKey
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Description
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC114YTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation High temperature applications up to 175 °C Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital applications in automotive and industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits
Request a Quote
Datasheet
Datasheet Summary
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PNP low VCEsat resistor-equipped transistor in a SOT23 surface-mounted package, measuring 2.9 mm by 1.3 mm by 1 mm, with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ, rated for a collector-emitter voltage of -50 V and a continuous output current of -100 mA, capable of operation up to 175 °C junction temperature and qualified to AEC-Q101 for automotive applications.

Datasheet Summary
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PNP low VCEsat resistor-equipped transistor in a SOT23 surface-mounted package, measuring 2.9 mm by 1.3 mm by 1 mm, with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ, rated for a collector-emitter voltage of -50 V and a continuous output current of -100 mA, capable of operation up to 175 °C junction temperature and qualified to AEC-Q101 for automotive applications.

Suppliers

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Product
Description
Supplier Links
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ - PBDTA114YTH-QR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ
PBDTA114YTH-QR
50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ PBDTA114YTH-QR
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PBDTC114YTH-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation High temperature applications up to 175 °C Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital applications in automotive and industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits

PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.

NPN complement: PBDTC114YTH-Q

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current gain (hFE)
  • High energy efficiency due to less heat generation
  • Improved device reliability due to reduced heat generation
  • High temperature applications up to 175 °C
  • Built-in bias resistors
  • Reduces component count
  • Reduces pick and place costs
  • Simplifies circuit design
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Digital applications in automotive and industrial segments
  • Battery-driven low power devices
  • Load-switches
  • Low current drivers
  • Power management and charging circuits
Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTA114YTH-QRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTA114YTH-QRDKR-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTA114YTH-QRDKR-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTA114YTH-QRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTA114YTH-QRCT-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTA114YTH-QRCT-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTA114YTH-QRTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTA114YTH-QRTR-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTA114YTH-QRTR-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBDTA114YTH-QR 1727-PBDTA114YTH-QRDKR-ND
Product Name 50 V, 100 mA low VCEsat PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ Single, Pre-Biased Bipolar Transistors
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
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