PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.
NPN complement: PBDTC114YTH-Q
Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current gain (hFE)
High energy efficiency due to less heat generation
Improved device reliability due to reduced heat generation
High temperature applications up to 175 °C
Built-in bias resistors
Reduces component count
Reduces pick and place costs
Simplifies circuit design
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Digital applications in automotive and industrial segments
Battery-driven low power devices
Load-switches
Low current drivers
Power management and charging circuits
PNP low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.
NPN complement: PBDTC114YTH-Q
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current gain (hFE)
- High energy efficiency due to less heat generation
- Improved device reliability due to reduced heat generation
- High temperature applications up to 175 °C
- Built-in bias resistors
- Reduces component count
- Reduces pick and place costs
- Simplifies circuit design
- Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
- Digital applications in automotive and industrial segments
- Battery-driven low power devices
- Load-switches
- Low current drivers
- Power management and charging circuits
