Nexperia B.V. 650 V, 30 A trench field-stop IGBT with full rated silicon diode NGW30T65M3DFPQ

Description
The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications. Applications Motor drives for industrial and consumer appliances Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc. Power inverters, such as Uninterruptible Power Supply (UPS) inverter EV charging converter Induction heating Welding
  • 650 V, 30 A trench field-stop IGBT with full rated silicon diode - NGW30T65M3DFPQ - Nexperia B.V.
    Nexperia B.V.
  • Single IGBTs - 1727-NGW30T65M3DFPQ-ND - DigiKey
    DigiKey
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Description
The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications. Applications Motor drives for industrial and consumer appliances Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc. Power inverters, such as Uninterruptible Power Supply (UPS) inverter EV charging converter Induction heating Welding
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650 V, 30 A trench field-stop IGBT with full rated silicon diode - NGW30T65M3DFPQ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
650 V, 30 A trench field-stop IGBT with full rated silicon diode
NGW30T65M3DFPQ
650 V, 30 A trench field-stop IGBT with full rated silicon diode NGW30T65M3DFPQ
The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications. Applications Motor drives for industrial and consumer appliances Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc. Power inverters, such as Uninterruptible Power Supply (UPS) inverter EV charging converter Induction heating Welding

The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.

Applications

  • Motor drives for industrial and consumer appliances
    • Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.
  • Power inverters, such as
    • Uninterruptible Power Supply (UPS) inverter
    • EV charging converter
  • Induction heating
  • Welding
Supplier's Site Datasheet
Single IGBTs - 1727-NGW30T65M3DFPQ-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
1727-NGW30T65M3DFPQ-ND
Single IGBTs 1727-NGW30T65M3DFPQ-ND
NGW30T65M3DFP/SOT429 -2/TO247-3

NGW30T65M3DFP/SOT429-2/TO247-3

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Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number NGW30T65M3DFPQ 1727-NGW30T65M3DFPQ-ND
Product Name 650 V, 30 A trench field-stop IGBT with full rated silicon diode Single IGBTs
Package Type SOT429-5 SOT429-5 TO-247; TO-247-3
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