Nexperia B.V. 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ PBDTC124ETH-QR

Description
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA124ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation High temperature applications up to 175 °C Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital applications in automotive and industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits
  • 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ - PBDTC124ETH-QR - Nexperia B.V.
    Nexperia B.V.
  • Single, Pre-Biased Bipolar Transistors - 1727-PBDTC124ETH-QRTR-ND - DigiKey
    DigiKey
Request a Quote
Description
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA124ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation High temperature applications up to 175 °C Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital applications in automotive and industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

NPN resistor-equipped transistor with built-in bias resistors R1 = 22 kΩ and R2 = 22 kΩ, designed for digital applications in automotive and industrial segments. Housed in a SOT23 surface-mounted package measuring 2.9 mm × 1.3 mm × 1 mm. Features a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a maximum junction temperature of 175 °C. Offers low collector-emitter saturation voltage and high current gain. Qualified to AEC-Q101 for automotive use.

Datasheet Summary
Powered by GS/AI

NPN resistor-equipped transistor with built-in bias resistors R1 = 22 kΩ and R2 = 22 kΩ, designed for digital applications in automotive and industrial segments. Housed in a SOT23 surface-mounted package measuring 2.9 mm × 1.3 mm × 1 mm. Features a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a maximum junction temperature of 175 °C. Offers low collector-emitter saturation voltage and high current gain. Qualified to AEC-Q101 for automotive use.

Suppliers

Company
Product
Description
Supplier Links
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ - PBDTC124ETH-QR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ
PBDTC124ETH-QR
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ PBDTC124ETH-QR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA124ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation High temperature applications up to 175 °C Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital applications in automotive and industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits

NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.

PNP complement: PBDTA124ETH-Q

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current gain (hFE)
  • High energy efficiency due to less heat generation
  • Improved device reliability due to reduced heat generation
  • High temperature applications up to 175 °C
  • Built-in bias resistors
  • Reduces component count
  • Reduces pick and place costs
  • Simplifies circuit design
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Digital applications in automotive and industrial segments
  • Battery-driven low power devices
  • Load-switches
  • Low current drivers
  • Power management and charging circuits
Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTC124ETH-QRTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTC124ETH-QRTR-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTC124ETH-QRTR-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBDTC124ETH-QR 1727-PBDTC124ETH-QRTR-ND
Product Name 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Single, Pre-Biased Bipolar Transistors
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
Unlock Full Specs
to access all available technical data

Similar Products

50 V, 100 mA NPN general-purpose transistors - 2PD601ASL-QVL - Nexperia B.V.
Nexperia B.V.
50 V, 100 mA NPN general-purpose transistors
2PD601ASL-QVL
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
View Details
2 suppliers
PNP general purpose transistor - 2PB1219AR,115 - Nexperia B.V.
Nexperia B.V.
PNP general purpose transistor
2PB1219AR,115
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
7 suppliers
Single Bipolar Transistors - 1727-2PB1424-QXDKR-ND - DigiKey
Nexperia B.V.
Single Bipolar Transistors
2PB1424-QX
Specs
Polarity PNP
Package Type SOT89; TO-243AA
Transistor Grade / Operating Range Automotive
View Details
Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT - BC817K-40 - Shenzhen Shengyu Electronics Technology Limited
Nexperia B.V.
Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
BC817K-40
Specs
Transistor Type BJT
View Details