BUK9Y19-55B is a logic level N-channel enhancement mode power FET designed for automotive and general purpose power switching applications, including 12 V and 24 V loads such as motors, lamps, and solenoids. It is packaged in an LFPAK (SOT669) surface-mounted plastic case with a mounting base connected to the drain. The device has a drain-source voltage rating of 55 V, a continuous drain current of 46 A at 25°C, and a maximum power dissipation of 85 W. Its drain-source on-state resistance is 16.3 mΩ at 5 V gate-source voltage and 25°C, rising to 40 mΩ at 175°C. The junction temperature rating is 175°C, and it meets AEC-Q101 qualification. It features very low on-state resistance and avalanche ruggedness with 80 mJ of non-repetitive drain-source avalanche energy.
BUK9Y19-55B - N-channel TrenchMOS logic level FET
| Rochester Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | BUK9Y19-55B/DSX |
| Polarity | N-Channel |