Nexperia B.V. 650 V, 50 A trench field-stop IGBT with full rated silicon diode NGW50T65H3DFPQ

Description
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. Applications Power inverters such as Uninterruptible Power Supply (UPS) inverter EV charging converter Power Factor Correction (PFC) Induction heating Welding
  • 650 V, 50 A trench field-stop IGBT with full rated silicon diode - NGW50T65H3DFPQ - Nexperia B.V.
    Nexperia B.V.
  • Single IGBTs - 1727-NGW50T65H3DFPQ-ND - DigiKey
    DigiKey
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Description
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. Applications Power inverters such as Uninterruptible Power Supply (UPS) inverter EV charging converter Power Factor Correction (PFC) Induction heating Welding
Request a Quote Datasheet

Suppliers

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650 V, 50 A trench field-stop IGBT with full rated silicon diode - NGW50T65H3DFPQ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
650 V, 50 A trench field-stop IGBT with full rated silicon diode
NGW50T65H3DFPQ
650 V, 50 A trench field-stop IGBT with full rated silicon diode NGW50T65H3DFPQ
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications. Applications Power inverters such as Uninterruptible Power Supply (UPS) inverter EV charging converter Power Factor Correction (PFC) Induction heating Welding

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.

Applications

  • Power inverters such as
    • Uninterruptible Power Supply (UPS) inverter
    • EV charging converter
  • Power Factor Correction (PFC)
  • Induction heating
  • Welding
Supplier's Site Datasheet
Single IGBTs - 1727-NGW50T65H3DFPQ-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
1727-NGW50T65H3DFPQ-ND
Single IGBTs 1727-NGW50T65H3DFPQ-ND
IGBT TRENCH FS 650V 80A TO-247

IGBT TRENCH FS 650V 80A TO-247

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Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number NGW50T65H3DFPQ 1727-NGW50T65H3DFPQ-ND
Product Name 650 V, 50 A trench field-stop IGBT with full rated silicon diode Single IGBTs
Package Type SOT429-5 SOT429-5 TO-247; TO-247-3
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