Nexperia B.V. 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ PBDTC144ETR

Description
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA144ET Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Applications Digital applications in industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits
  • 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ - PBDTC144ETR - Nexperia B.V.
    Nexperia B.V.
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    DigiKey
  • Single, Pre-Biased Bipolar Transistors - 1727-PBDTC144ETRDKR-ND - DigiKey
    DigiKey
  • Single, Pre-Biased Bipolar Transistors - 1727-PBDTC144ETR-ND - DigiKey
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Description
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA144ET Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Applications Digital applications in industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits
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Datasheet
Datasheet Summary
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NPN resistor-equipped transistor with built-in bias resistors R1 = 47 kΩ and R2 = 47 kΩ, designed for low VCEsat applications in digital and battery-powered circuits. Housed in a SOT23 surface-mounted package measuring 2.9 mm × 1.3 mm × 1 mm. Features a collector-emitter voltage rating of 50 V, maximum collector current of 100 mA, and power dissipation of up to 250 mW on a single-sided FR4 PCB. Operating junction temperature range extends from -55 °C to 150 °C. Meets IEC 60134 absolute maximum rating standards.

Datasheet Summary
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NPN resistor-equipped transistor with built-in bias resistors R1 = 47 kΩ and R2 = 47 kΩ, designed for low VCEsat applications in digital and battery-powered circuits. Housed in a SOT23 surface-mounted package measuring 2.9 mm × 1.3 mm × 1 mm. Features a collector-emitter voltage rating of 50 V, maximum collector current of 100 mA, and power dissipation of up to 250 mW on a single-sided FR4 PCB. Operating junction temperature range extends from -55 °C to 150 °C. Meets IEC 60134 absolute maximum rating standards.

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50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ - PBDTC144ETR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
PBDTC144ETR
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ PBDTC144ETR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA144ET Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Applications Digital applications in industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits

NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.

PNP complement: PBDTA144ET

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current gain (hFE)
  • High energy efficiency due to less heat generation
  • Improved device reliability due to reduced heat generation
  • Built-in bias resistors
  • Reduces component count
  • Reduces pick and place costs
  • Simplifies circuit design

Applications

  • Digital applications in industrial segments
  • Battery-driven low power devices
  • Load-switches
  • Low current drivers
  • Power management and charging circuits
Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTC144ETRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTC144ETRCT-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTC144ETRCT-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTC144ETRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTC144ETRDKR-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTC144ETRDKR-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTC144ETR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTC144ETR-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTC144ETR-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBDTC144ETR 1727-PBDTC144ETRCT-ND
Product Name 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Single, Pre-Biased Bipolar Transistors
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
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