Nexperia B.V. 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PBDTC123JTR

Description
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA123JT Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Applications Digital applications in industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits
  • 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ - PBDTC123JTR - Nexperia B.V.
    Nexperia B.V.
  • Single, Pre-Biased Bipolar Transistors - 1727-PBDTC123JTRCT-ND - DigiKey
    DigiKey
  • Single, Pre-Biased Bipolar Transistors - 1727-PBDTC123JTR-ND - DigiKey
    DigiKey
  • Single, Pre-Biased Bipolar Transistors - 1727-PBDTC123JTRDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA123JT Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Applications Digital applications in industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits
Request a Quote Datasheet

Suppliers

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50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ - PBDTC123JTR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PBDTC123JTR
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PBDTC123JTR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA123JT Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Applications Digital applications in industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits

NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.

PNP complement: PBDTA123JT

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current gain (hFE)
  • High energy efficiency due to less heat generation
  • Improved device reliability due to reduced heat generation
  • Built-in bias resistors
  • Reduces component count
  • Reduces pick and place costs
  • Simplifies circuit design

Applications

  • Digital applications in industrial segments
  • Battery-driven low power devices
  • Load-switches
  • Low current drivers
  • Power management and charging circuits
Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTC123JTRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTC123JTRCT-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTC123JTRCT-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTC123JTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTC123JTR-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTC123JTR-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTC123JTRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTC123JTRDKR-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTC123JTRDKR-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBDTC123JTR 1727-PBDTC123JTRCT-ND
Product Name 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Single, Pre-Biased Bipolar Transistors
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
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