Nexperia B.V. 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) GANB8R0-040CBAZ

Description
The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Tr ansistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Bi-directional device Ultra high switching speed capability Ultra-low on-state resistance RoHS, Pb-free, REACH-compliant High efficiency and high power density Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm Applications High-side load switch OVP protection in smart phone USB port DC-to-DC converters Power switch circuits Stand-by power system
  • 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) - GANB8R0-040CBAZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-GANB8R0-040CBAZCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-GANB8R0-040CBAZDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-GANB8R0-040CBAZTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Tr ansistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Bi-directional device Ultra high switching speed capability Ultra-low on-state resistance RoHS, Pb-free, REACH-compliant High efficiency and high power density Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm Applications High-side load switch OVP protection in smart phone USB port DC-to-DC converters Power switch circuits Stand-by power system
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) - GANB8R0-040CBAZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)
GANB8R0-040CBAZ
40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) GANB8R0-040CBAZ
The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Tr ansistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Bi-directional device Ultra high switching speed capability Ultra-low on-state resistance RoHS, Pb-free, REACH-compliant High efficiency and high power density Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm Applications High-side load switch OVP protection in smart phone USB port DC-to-DC converters Power switch circuits Stand-by power system

The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance.

Features and benefits

  • Enhancement mode - normally-off power switch
  • Bi-directional device
  • Ultra high switching speed capability
  • Ultra-low on-state resistance
  • RoHS, Pb-free, REACH-compliant
  • High efficiency and high power density
  • Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm

Applications

  • High-side load switch
  • OVP protection in smart phone USB port
  • DC-to-DC converters
  • Power switch circuits
  • Stand-by power system
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-GANB8R0-040CBAZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-GANB8R0-040CBAZCT-ND
Single FETs, MOSFETs 1727-GANB8R0-040CBAZCT-ND
GANB8R0-040CBA/SOT80 87/WLCSP16

GANB8R0-040CBA/SOT8087/WLCSP16

Buy Now Datasheet
Single FETs, MOSFETs - 1727-GANB8R0-040CBAZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-GANB8R0-040CBAZDKR-ND
Single FETs, MOSFETs 1727-GANB8R0-040CBAZDKR-ND
GANB8R0-040CBA/SOT80 87/WLCSP16

GANB8R0-040CBA/SOT8087/WLCSP16

Buy Now Datasheet
Single FETs, MOSFETs - 1727-GANB8R0-040CBAZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-GANB8R0-040CBAZTR-ND
Single FETs, MOSFETs 1727-GANB8R0-040CBAZTR-ND
GANB8R0-040CBA/SOT80 87/WLCSP16

GANB8R0-040CBA/SOT8087/WLCSP16

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number GANB8R0-040CBAZ 1727-GANB8R0-040CBAZCT-ND
Product Name 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) Single FETs, MOSFETs
Package Type WLCSP16_SOT8087 WLCSP16_SOT8087 16-UFBGA, WLCSP
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