Nexperia B.V. Power Field-Effect Transistor, 86A I(D), 60V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 BUK9Y8R7-60E

Description

Power Field-Effect Transistor, 86A I(D), 60V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Utmel Electronic Limited

Description

Power Field-Effect Transistor, 86A I(D), 60V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

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Power Field-Effect Transistor, 86A I(D), 60V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 - 554-BUK9Y8R7-60E - Utmel Electronic Limited

Utmel Electronic Limited

Hong Kong, China

Power Field-Effect Transistor, 86A I(D), 60V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
554-BUK9Y8R7-60E

Power Field-Effect Transistor, 86A I(D), 60V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 554-BUK9Y8R7-60E

Power Field-Effect Transistor, 86A I(D), 60V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

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Technical Specifications

	Utmel Electronic Limited
Product Category	Transistors
Product Number	554-BUK9Y8R7-60E
Product Name	Power Field-Effect Transistor, 86A I(D), 60V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
Polarity	N-Channel