Nexperia B.V. 100 V, 3 A PNP high power bipolar transistor MJPE32CZ

PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead surface-mounted plastic package, measuring 5.8 x 4.3 x 0.95 mm. Rated for a collector-emitter voltage of -100 V and a continuous collector current of -3 A, with a peak collector current of -5 A for pulses up to 1 ms. Maximum power dissipation is 1.6 W on a standard FR4 PCB or 2.2 W with a 1 cm² collector pad. Junction temperature ranges from -55 °C to 175 °C. Features a collector-emitter saturation voltage of up to 1.2 V at -3 A collector current and -375 mA base current. Thermal resistance from junction to ambient is 69 K/W with an enhanced collector pad. NPN complement is MJPE31C. Meets IEC 60134 for limiting values.