The NGW75T65M3DFQ is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFQ is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency applications, such as power inverters and converters.
Applications
Auxiliary inverters for compressor and coolant pump
Positive Temperature Coefficient (PTC) heater
On- and off-board charging converters
Motor drives
The NGW75T65M3DFQ is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65M3DFQ is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency applications, such as power inverters and converters.
Applications
- Auxiliary inverters for compressor and coolant pump
- Positive Temperature Coefficient (PTC) heater
- On- and off-board charging converters
- Motor drives
