Nexperia B.V. 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ PBDTC144ETH-QR

Description
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA144ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation High temperature applications up to 175 °C Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital applications in automotive and industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits
  • 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ - PBDTC144ETH-QR - Nexperia B.V.
    Nexperia B.V.
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Description
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA144ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation High temperature applications up to 175 °C Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital applications in automotive and industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits
Request a Quote
Datasheet
Datasheet Summary
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NPN low V<sub>CEsat</sub> resistor-equipped transistor in a SOT23 surface-mounted package measuring 2.9 mm × 1.3 mm × 1 mm, with built-in bias resistors R1 = 47 kΩ and R2 = 47 kΩ, rated for a collector-emitter voltage of 50 V and a continuous output current of 100 mA, capable of operating at junction temperatures up to 175 °C and qualified to AEC-Q101 for automotive applications.

Datasheet Summary
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NPN low V<sub>CEsat</sub> resistor-equipped transistor in a SOT23 surface-mounted package measuring 2.9 mm × 1.3 mm × 1 mm, with built-in bias resistors R1 = 47 kΩ and R2 = 47 kΩ, rated for a collector-emitter voltage of 50 V and a continuous output current of 100 mA, capable of operating at junction temperatures up to 175 °C and qualified to AEC-Q101 for automotive applications.

Suppliers

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Supplier Links
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ - PBDTC144ETH-QR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
PBDTC144ETH-QR
50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ PBDTC144ETH-QR
NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBDTA144ETH-Q Features and benefits Low collector-emitter saturation voltage VCEsat High collector current gain (hFE) High energy efficiency due to less heat generation Improved device reliability due to reduced heat generation High temperature applications up to 175 °C Built-in bias resistors Reduces component count Reduces pick and place costs Simplifies circuit design Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital applications in automotive and industrial segments Battery-driven low power devices Load-switches Low current drivers Power management and charging circuits

NPN low VCEsat energy efficient Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.

PNP complement: PBDTA144ETH-Q

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current gain (hFE)
  • High energy efficiency due to less heat generation
  • Improved device reliability due to reduced heat generation
  • High temperature applications up to 175 °C
  • Built-in bias resistors
  • Reduces component count
  • Reduces pick and place costs
  • Simplifies circuit design
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Digital applications in automotive and industrial segments
  • Battery-driven low power devices
  • Load-switches
  • Low current drivers
  • Power management and charging circuits
Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTC144ETH-QRTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTC144ETH-QRTR-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTC144ETH-QRTR-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTC144ETH-QRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTC144ETH-QRCT-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTC144ETH-QRCT-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PBDTC144ETH-QRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PBDTC144ETH-QRDKR-ND
Single, Pre-Biased Bipolar Transistors 1727-PBDTC144ETH-QRDKR-ND
BIPOLAR DISCRETES

BIPOLAR DISCRETES

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBDTC144ETH-QR 1727-PBDTC144ETH-QRTR-ND
Product Name 50 V, 100 mA low VCEsat NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ Single, Pre-Biased Bipolar Transistors
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
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