Infineon Technologies AG RF Bipolar Transistors BFR 92P E6327

Description
RF Bipolar Transistors TRANS GP BJT NPN 15V 0.045A
Description
RF Bipolar Transistors TRANS GP BJT NPN 15V 0.045A
Datasheet
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BFR92P is a low-noise silicon bipolar RF transistor designed for broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA. It is packaged in an SOT23 case with a collector-emitter voltage rating of 15 V and a maximum collector current of 45 mA. The total power dissipation is 280 mW at 25 °C, with a junction temperature limit of 150 °C. The device has a transition frequency of 3.5 to 5 GHz and a minimum noise figure of 1.4 dB at 900 MHz. It is RoHS compliant and qualified to AEC-Q101 standards.

Datasheet Summary
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BFR92P is a low-noise silicon bipolar RF transistor designed for broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA. It is packaged in an SOT23 case with a collector-emitter voltage rating of 15 V and a maximum collector current of 45 mA. The total power dissipation is 280 mW at 25 °C, with a junction temperature limit of 150 °C. The device has a transition frequency of 3.5 to 5 GHz and a minimum noise figure of 1.4 dB at 900 MHz. It is RoHS compliant and qualified to AEC-Q101 standards.

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Sheung Wan, Hong Kong
RF Bipolar Transistors
BFR 92P E6327
RF Bipolar Transistors BFR 92P E6327
RF Bipolar Transistors TRANS GP BJT NPN 15V 0.045A

RF Bipolar Transistors TRANS GP BJT NPN 15V 0.045A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BFR 92P E6327
Product Name RF Bipolar Transistors
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