The BSM25GP120 is an IGBT module for inverter and brake-chopper applications. It has a 1200 V collector-emitter voltage rating and continuous collector current of 25 A at 80 °C case temperature. Repetitive peak collector current is 50 A for 1 ms. Total power dissipation is 230 W at 25 °C. Gate-emitter peak voltage is ±20 V. Integrated diodes support 25 A continuous forward current and 50 A peak. Turn-on delay is 45 ns, and fall time is 60 ns under inductive load. Insulation test voltage is 2.5 kV RMS. An integrated NTC thermistor has 25 kΩ resistance at 25 °C and a B-value of 3375 K.
Insulated Gate Bipolar Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BSM25GP120B2BPSA1 |
| Package Type | EconoPIM2 |
