Infineon Technologies AG IGBT Modules FD1000R33HL3KBPSA1

Description
Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel
Request a Quote Datasheet
Description
Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FD1000R33HL3KBPSA1 - Rochester Electronics
Newburyport, MA, United States
Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 3300V V(BR)CES, N-Channel

Supplier's Site Datasheet
IGBT Modules - FD1000R33HL3KBPSA1-ND - DigiKey
Thief River Falls, MN, United States
IGBT Module Trench Field Stop 2 Independent 3300V 1000A 11500W Chassis Mount Module

IGBT Module Trench Field Stop 2 Independent 3300V 1000A 11500W Chassis Mount Module

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FD1000R33HL3KBPSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FD1000R33HL3KBPSA1
Discrete Semiconductor Products - Transistors - IGBTs FD1000R33HL3KBPSA1
IGBT MODULE 3300V 1000A

IGBT MODULE 3300V 1000A

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number FD1000R33HL3KBPSA1 FD1000R33HL3KBPSA1-ND FD1000R33HL3KBPSA1
Product Name IGBT Modules Discrete Semiconductor Products - Transistors - IGBTs
Package Type AG-IHVB19-311 Module
Unlock Full Specs
to access all available technical data