Infineon Technologies AG RF Bipolar Transistors BFR 183 E6327

Description
RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
Description
RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
Datasheet
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The BFR183 is a low-noise silicon NPN RF transistor designed for broadband amplifiers with collector currents from 2 mA to 30 mA. It is packaged in SOT23 and has a maximum collector-emitter voltage of 12 V, a collector current rating of 65 mA, and a total power dissipation of 450 mW. The device achieves a minimum noise figure of 0.9 dB at 900 MHz and a transition frequency of up to 8 GHz. It is RoHS compliant and has a junction temperature range of -55 to 150 °C. Qualification according to AEC-Q101 is available.

Datasheet Summary
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The BFR183 is a low-noise silicon NPN RF transistor designed for broadband amplifiers with collector currents from 2 mA to 30 mA. It is packaged in SOT23 and has a maximum collector-emitter voltage of 12 V, a collector current rating of 65 mA, and a total power dissipation of 450 mW. The device achieves a minimum noise figure of 0.9 dB at 900 MHz and a transition frequency of up to 8 GHz. It is RoHS compliant and has a junction temperature range of -55 to 150 °C. Qualification according to AEC-Q101 is available.

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Sheung Wan, Hong Kong
RF Bipolar Transistors
BFR 183 E6327
RF Bipolar Transistors BFR 183 E6327
RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW

RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BFR 183 E6327
Product Name RF Bipolar Transistors
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