Infineon Technologies AG RF Bipolar Transistors BFR 193W H6327

Description
RF Bipolar Transistors RF BIP TRANSISTOR
Description
RF Bipolar Transistors RF BIP TRANSISTOR
Datasheet
Datasheet Summary
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The BFR193W is a low-noise silicon bipolar RF transistor designed for amplifiers up to 2 GHz, packaged in SOT323 with a maximum power dissipation of 580 mW at a case temperature of 63°C. It operates with a collector-emitter voltage up to 12 V and a junction temperature up to 150°C. The device has a transition frequency of 6 to 8 GHz, a minimum noise figure of 1 dB at 900 MHz, and a maximum available power gain of 16 dB at 900 MHz. It is RoHS compliant and qualified according to AEC-Q101.

Datasheet Summary
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The BFR193W is a low-noise silicon bipolar RF transistor designed for amplifiers up to 2 GHz, packaged in SOT323 with a maximum power dissipation of 580 mW at a case temperature of 63°C. It operates with a collector-emitter voltage up to 12 V and a junction temperature up to 150°C. The device has a transition frequency of 6 to 8 GHz, a minimum noise figure of 1 dB at 900 MHz, and a maximum available power gain of 16 dB at 900 MHz. It is RoHS compliant and qualified according to AEC-Q101.

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Sheung Wan, Hong Kong
RF Bipolar Transistors
BFR 193W H6327
RF Bipolar Transistors BFR 193W H6327
RF Bipolar Transistors RF BIP TRANSISTOR

RF Bipolar Transistors RF BIP TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BFR 193W H6327
Product Name RF Bipolar Transistors
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