Radwell International Datasheets for MRAM
Magnetoresistive random access memory (MRAM) stores bits of data by using magnetic charges. MRAM is designed for high density, high speed, and non-volatile devices and has the potential to replace DRAM and Flash (EEPROM) memory.
MRAM: Learn more
| Product Name | Notes |
|---|---|
| MRAM, PARALLEL, 4MBIT, 256K X 16, 16BIT, 35NS, 3.6V, 105MA, TSOP-44. FREE 2 YEAR RADWELL WARRANTY |