PNP Bipolar Transistor
PNP BJT Transistor, 65V VCEO, 100mA IC, 100MHz, SOT-23 Product overview: SBC856BLT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 100mA, 100MHz, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 65V, 100mA, 100MHz, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-SBC856BLT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 800571-SBC856BLT1G
Packaging: Reel
Mounting Style: SMD
Power - Max: 300mW
Transistor Type: PNP
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 65V
Current - Collector Cutoff (Maximum): 15nA (ICBO)
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 650mV at 5mA, 100mA
DC Current Gain (hFE) (Min) at Ic, Vce: 220 at 2mA, 5V
Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)
Bipolar Transistors - Pre-Biased SS GP XSTR SPCL TR
TRANS PNP 65V 0.1A SOT23-3
TRANS, AEC-Q101, PNP, -65V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:-100mA; DC Current Gain hFE:150hFE; Transistor RoHS Compliant: Yes
TRANS, AEC-Q101, PNP, -65V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:-100mA; DC Current Gain hFE:150hFE; Transistor RoHS Compliant: Yes
TRANS PNP 65V 0.1A SOT23-3
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | SBC856BLT1G | 276-SBC856BLT1G | 800571-SBC856BLT1G | SBC856BLT1GOSTR-ND | SBC856BLT1G | SBC856BLT1G | 85AC2158 | SBC856BLT1G |
| Product Name | 65V 100mA 100MHz SOT-23 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - SBC856BLT1G | Single Bipolar Transistors | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Trans, Aec-Q101, Pnp, -65V, Sot-23-3; Transistor Polarity Onsemi | Single Bipolar Transistors | |
| Polarity | PNP | PNP | PNP | PNP | PNP | PNP; PNP | ||
| Package Type | SOT23; SOT-23 (TO-236) 3 LEAD | SOT3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | AEC-Q101 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||||
| VCEO | 65 volts | 65 volts | 65 volts |
