onsemi TRANSISTORS - Transistors (BJT) - Single - SBC856BLT1G SBC856BLT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 800571-SBC856BLT1G Packaging: Reel Mounting Style: SMD Power - Max: 300mW Transistor Type: PNP Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 65V Current - Collector Cutoff (Maximum): 15nA (ICBO) Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 650mV at 5mA, 100mA DC Current Gain (hFE) (Min) at Ic, Vce: 220 at 2mA, 5V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 800571-SBC856BLT1G Packaging: Reel Mounting Style: SMD Power - Max: 300mW Transistor Type: PNP Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 65V Current - Collector Cutoff (Maximum): 15nA (ICBO) Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 650mV at 5mA, 100mA DC Current Gain (hFE) (Min) at Ic, Vce: 220 at 2mA, 5V
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - SBC856BLT1G - 800571-SBC856BLT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - SBC856BLT1G
800571-SBC856BLT1G
TRANSISTORS - Transistors (BJT) - Single - SBC856BLT1G 800571-SBC856BLT1G
Manufacturer: ON Semiconductor Win Source Part Number: 800571-SBC856BLT1G Packaging: Reel Mounting Style: SMD Power - Max: 300mW Transistor Type: PNP Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 65V Current - Collector Cutoff (Maximum): 15nA (ICBO) Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 650mV at 5mA, 100mA DC Current Gain (hFE) (Min) at Ic, Vce: 220 at 2mA, 5V

Manufacturer: ON Semiconductor
Win Source Part Number: 800571-SBC856BLT1G
Packaging: Reel
Mounting Style: SMD
Power - Max: 300mW
Transistor Type: PNP
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 65V
Current - Collector Cutoff (Maximum): 15nA (ICBO)
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 650mV at 5mA, 100mA
DC Current Gain (hFE) (Min) at Ic, Vce: 220 at 2mA, 5V

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 - SBC856BLT1G - Rochester Electronics
Newburyport, MA, United States
PNP Bipolar Transistor

PNP Bipolar Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - SBC856BLT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
SBC856BLT1GOSTR-ND
Single Bipolar Transistors SBC856BLT1GOSTR-ND
Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)

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Single Bipolar Transistors - SBC856BLT1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
SBC856BLT1GOSCT-ND
Single Bipolar Transistors SBC856BLT1GOSCT-ND
Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single Bipolar Transistors - SBC856BLT1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
SBC856BLT1GOSDKR-ND
Single Bipolar Transistors SBC856BLT1GOSDKR-ND
Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)

Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)

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Single Bipolar Transistors - SBC856BLT1G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
SBC856BLT1G
Single Bipolar Transistors SBC856BLT1G
TRANS PNP 65V 0.1A SOT23-3

TRANS PNP 65V 0.1A SOT23-3

Supplier's Site Datasheet
Singapore
65V 100mA 100MHz SOT-23 Bipolar Transistor
276-SBC856BLT1G
65V 100mA 100MHz SOT-23 Bipolar Transistor 276-SBC856BLT1G
PNP BJT Transistor, 65V VCEO, 100mA IC, 100MHz, SOT-23 Product overview: SBC856BLT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 100mA, 100MHz, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 65V, 100mA, 100MHz, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-SBC856BLT1G can be used for catalog matching and distributor lookup.

PNP BJT Transistor, 65V VCEO, 100mA IC, 100MHz, SOT-23 Product overview: SBC856BLT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 100mA, 100MHz, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 65V, 100mA, 100MHz, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-SBC856BLT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SBC856BLT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SBC856BLT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SBC856BLT1G
TRANS PNP 65V 0.1A SOT23-3

TRANS PNP 65V 0.1A SOT23-3

Supplier's Site
Trans, Aec-Q101, Pnp, -65V, Sot-23-3; Transistor Polarity Onsemi - 85AC2158 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Aec-Q101, Pnp, -65V, Sot-23-3; Transistor Polarity Onsemi
85AC2158
Trans, Aec-Q101, Pnp, -65V, Sot-23-3; Transistor Polarity Onsemi 85AC2158
TRANS, AEC-Q101, PNP, -65V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:-100mA; DC Current Gain hFE:150hFE; Transistor RoHS Compliant: Yes

TRANS, AEC-Q101, PNP, -65V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:-100mA; DC Current Gain hFE:150hFE; Transistor RoHS Compliant: Yes

Supplier's Site Datasheet
Trans, Aec-Q101, Pnp, -65V, Sot-23-3; Transistor Polarity Onsemi - 02AC3868 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Aec-Q101, Pnp, -65V, Sot-23-3; Transistor Polarity Onsemi
02AC3868
Trans, Aec-Q101, Pnp, -65V, Sot-23-3; Transistor Polarity Onsemi 02AC3868
TRANS, AEC-Q101, PNP, -65V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:-100mA; DC Current Gain hFE:150hFE; Transistor RoHS Compliant: Yes

TRANS, AEC-Q101, PNP, -65V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:-100mA; DC Current Gain hFE:150hFE; Transistor RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
SBC856BLT1G
Bipolar Transistors - Pre-Biased SBC856BLT1G
Bipolar Transistors - Pre-Biased SS GP XSTR SPCL TR

Bipolar Transistors - Pre-Biased SS GP XSTR SPCL TR

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Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 800571-SBC856BLT1G SBC856BLT1G SBC856BLT1GOSTR-ND SBC856BLT1G 276-SBC856BLT1G SBC856BLT1G 85AC2158 SBC856BLT1G
Product Name TRANSISTORS - Transistors (BJT) - Single - SBC856BLT1G Single Bipolar Transistors Single Bipolar Transistors 65V 100mA 100MHz SOT-23 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Trans, Aec-Q101, Pnp, -65V, Sot-23-3; Transistor Polarity Onsemi Bipolar Transistors - Pre-Biased
Polarity PNP PNP PNP PNP; PNP PNP PNP
Package Type SOT3; SOT23 SOT23; SOT-23 (TO-236) 3 LEAD SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 AEC-Q101 TO-3; SOT23
Packing Method Tape Reel; Reel Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Power Gain 220 dB
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