Renesas Electronics Corporation RJK03E0DNS-00#J5

The RJK03E0DNS is a silicon N-channel power MOSFET designed for power switching applications. It is packaged in an HWSON-8 case, measuring 3.1 mm by 2.9 mm. The device has a drain-to-source voltage rating of 30 V, a continuous drain current of 30 A, and a typical on-resistance of 4.3 mΩ at 10 V gate drive. It supports 4.5 V gate drive and features low gate charge and high-speed switching. The package is Pb-free and halogen-free, and the part meets RoHS requirements. Thermal resistance from channel to case is 6.25 °C/W, with a maximum channel temperature of 150 °C. Peak drain current is 120 A under pulse conditions, and avalanche energy rating is 16.9 mJ at 25 °C channel temperature.