The RJK03E2DNS is a silicon N-channel power MOSFET designed for power switching applications. It is packaged in an HWSON-8 case measuring 2.9 mm × 3.1 mm with a height of 0.8 mm max and weighs 0.022 g. The device features a drain-source voltage rating of 30 V, a continuous drain current of 16 A, and a typical on-resistance of 6.9 mΩ at 10 V gate drive. It supports 4.5 V gate drive, has a channel-to-case thermal impedance of 10.0 °C/W, and operates with a maximum channel temperature of 150 °C. The part is Pb-free and halogen-free, and meets RoHS requirements. Avalanche energy is rated at 6.4 mJ under specified conditions.
Power Field-Effect Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RJK03E2DNS-00#J5 |
| Package Type | HWSON8 |
