The RJP4003ANS is an N-channel IGBT designed for strobe flash applications, housed in a VSON-8 package measuring 3.00 mm by 4.40 mm. It features a collector-emitter voltage rating of 400 V and a peak pulse collector current of 150 A at a gate-emitter drive voltage of 4 V. The device operates with a junction temperature range of -40°C to +150°C and includes integrated emitter pins for low-inductance connections. The gate-emitter threshold voltage ranges from 0.5 V to 1.5 V, and the saturation voltage is specified up to 10.0 V at 150 A. The part is rated for 5,000 discharge cycles under full luminescence conditions with a 400 µF main capacitor.
IGBTs for Strobe, 400V, 150A, N-Channel
| Rochester Electronics | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RJP4003ANS-00#Q1 |
| Polarity | N-Channel |
