Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1908FE(TE85L,F) RN1908FE(TE85L,F)

Description
RN1908FE - Bias resistor built-in transistor (BRT), 2-in-1
Request a Quote Datasheet
Description
RN1908FE - Bias resistor built-in transistor (BRT), 2-in-1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - RN1908FE(TE85L,F) - Rochester Electronics
Newburyport, MA, United States
RN1908FE - Bias resistor built-in transistor (BRT), 2-in-1

RN1908FE - Bias resistor built-in transistor (BRT), 2-in-1

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1908FE(TE85L,F) - 098319-RN1908FE(TE85L,F) - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1908FE(TE85L,F)
098319-RN1908FE(TE85L,F)
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1908FE(TE85L,F) 098319-RN1908FE(TE85L,F)
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 098319-RN1908FE(TE85 L,F) Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: ES6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 098319-RN1908FE(TE85L,F)
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: ES6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore, Singapore
0.1W Bipolar Transistor
293-RN1908FE(TE85L,F)
0.1W Bipolar Transistor 293-RN1908FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6 Product overview: RN1908FE(TE85L,F) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1908FE(TE85L,F ) can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.1W ES6 Product overview: RN1908FE(TE85L,F) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1908FE(TE85L,F) can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN1908FE(TE85LF)TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN1908FE(TE85LF)TR-ND
Bipolar Transistor Arrays, Pre-Biased RN1908FE(TE85LF)TR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Buy Now Datasheet
TRANS 2NPN PREBIAS 0.1W ES6 - 4669-RN1908FE(TE85L,F) - Utmel Electronic Limited
Hong Kong, China
TRANS 2NPN PREBIAS 0.1W ES6
4669-RN1908FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6 4669-RN1908FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6

TRANS 2NPN PREBIAS 0.1W ES6

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN1908FE(TE85L,F) - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN1908FE(TE85L,F)
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN1908FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6

TRANS 2NPN PREBIAS 0.1W ES6

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited Acme Chip Technology Co., Limited
Product Category Transistors Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number RN1908FE(TE85L,F) 098319-RN1908FE(TE85L,F) 293-RN1908FE(TE85L,F) RN1908FE(TE85LF)TR-ND 4669-RN1908FE(TE85L,F) RN1908FE(TE85L,F)
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1908FE(TE85L,F) 0.1W Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.1W ES6 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type ES6 SOT3; ES6 Tape & Reel (TR) SOT-563, SOT-666
Polarity NPN; 2 NPN - Pre-Biased (Dual) NPN NPN NPN; NPN
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps
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