P-channel power MOSFET for high-speed switching applications in DC-DC converters, motor control, and solenoid control. Housed in a TO-220FN package with dimensions of 10.0 ± 0.3 mm length, 5.3 ± 0.3 mm width, and 2.0 g mass. Rated for a drain-to-source voltage of -60 V, continuous drain current of -25 A, and maximum channel dissipation of 35 W at 25°C case temperature. Static drain-to-source on-resistance is specified up to 56 mΩ at -10 V gate bias. Operates within a junction temperature range of -55°C to +150°C. Complies with RoHS standards.
Power Field-Effect Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RJJ0621DPP-E0#T2 |
| Package Type | TO-220; TO-220FP |
